FDMT800152DC Allicdata Electronics

FDMT800152DC Discrete Semiconductor Products

Allicdata Part #:

FDMT800152DCTR-ND

Manufacturer Part#:

FDMT800152DC

Price: $ 2.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 13A
More Detail: N-Channel 100V 13A (Ta), 72A (Tc) 3.2W (Ta), 113W ...
DataSheet: FDMT800152DC datasheetFDMT800152DC Datasheet/PDF
Quantity: 1000
1 +: $ 2.07200
10 +: $ 2.00984
100 +: $ 1.96840
1000 +: $ 1.92696
10000 +: $ 1.86480
Stock 1000Can Ship Immediately
$ 2.07
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-Dual Cool™88
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 113W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Series: Dual Cool™, PowerTrench®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMT800152DC is a depletion mode analog switches, which belongs to the family of field effect transistors (FETs) and more particularly, to metal oxide semiconductor field-effect transistors (MOSFETs). It is a single FET, meaning that it is composed of only one field effect transistor structure. The purpose of this component is to act as a switch in analog circuits, which means it is capable of turning analog signals to either on or off. This article will discuss the application field and working principle of the FDMT800152DC.

Application Field of FDMT800152DC

The FDMT800152DC can be used in a wide range of analog circuit applications as it is a single FET resulting from the integration of several components on one chip. Examples of such applications include, but are not limited to, signal routing and signal switching.

Specifically, the FDMT800152DC can be employed in the manufacturing of capacitor arrays, power management systems, and headphone amplifiers, as well as for controlling analog signals in consumer and industrial equipment. The superior switching speeds, high current handling capability, and seamless transistor isolation make the FDMT800152DC an ideal choice for designing any of these types of circuits.

Working Principle of FDMT800152DC

The depletion mode feature of the switch makes it possible for the FDMT800152DC to automatically form a circuit element when the gate is not asserted. This is possible because of the depletion mode transistor’s characteristic of operation at 0 V gate-source voltage. This feature is extremely advantageous as it requires no additional external components to form the circuit. This characteristic also contributes to the high switching speeds of the component.

The FDMT800152DC package has two pins - the Gate and the Drain. The gate pin is used to control the flow of current from the drain pin to the source. When a negative voltage is applied to the gate pin, the current flow through the component is blocked. When a positive voltage is applied to the gate pin, the current flow is enabled. This can be used to control the analog signal, which passes through the component.

The FDMT800152DC also uses an inter-terminal dielectric between the gate and the drain pins that prevents the flow of charge carriers. This dielectric material helps to protect the component from damage due to reverse bias and overvoltage conditions.

To sum up, the FDMT800152DC is a single FET that can be used in many analog circuit applications. It is a depletion mode component, meaning that it does not require any external components for operation. Its two pins - the gate and the drain - are used to control the flow of current and the analogue signal passing through it. Finally, its inter-terminal dielectric material helps to prevent damage due to reverse bias and overvoltage conditions.

The specific data is subject to PDF, and the above content is for reference

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