FDMT800120DC Allicdata Electronics

FDMT800120DC Discrete Semiconductor Products

Allicdata Part #:

FDMT800120DCTR-ND

Manufacturer Part#:

FDMT800120DC

Price: $ 2.62
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 120V 20A/129A
More Detail: N-Channel 120V 20A (Ta), 129A (Tc) 3.2W (Ta), 156W...
DataSheet: FDMT800120DC datasheetFDMT800120DC Datasheet/PDF
Quantity: 1000
3000 +: $ 2.35462
Stock 1000Can Ship Immediately
$ 2.62
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-Dual Cool™88
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7850pF @ 60V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Series: Dual Cool™, PowerTrench®
Rds On (Max) @ Id, Vgs: 4.14 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Drain to Source Voltage (Vdss): 120V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMT800120DC is a type of single power MOSFET or Metal Oxide Semiconductor Field Effect Transistor designed to regulate and control current flow in electronic circuits. They are a type of transistor that functions as a voltage-controlled switch, using an oxide-insulated gate electrode to control the flow of current between the source and drain. This particular model of power MOSFET is bipolar N-Channel, with a maximum drain-source voltage of 800V, a drain current of 120A, and a rising time of 0.3ns. It has a maximum drain-source on-resistance of 9mΩ and can withstand up to 175°C junction temperature.

MOSFETs are used in a variety of applications and are often preferred over traditional transistors because they have superior electrical properties. One of their main advantages is that they can switch between conducting and non-conducting (open) states in a very short amount of time and at very low voltage. They are used in high frequency and high power switching applications, such as switching power supplies, DC-DC converters, inverters, motor control, and motor drives. They are also used in audio amplifiers, LED lighting, LCDs, and other consumer electronics.

As with any electronic component, the working principles and behaviour of MOSFETs vary depending on their usage. Generally, they can be used as switches, amplifiers, and as voltage regulators. In a basic circuit, they are used as a switch where the gate voltage is used to control the flow of current in the drain-source path. This type of circuit is commonly used in power supplies, motors and other high-power devices. When used as an amplifier, the voltage at the gate electrode is used to regulate the amount of current that flows in the transistor. This type of circuit is commonly used in audio amplifiers, where the gate voltage is used to control the output of the amplifier.

MOSFETs can also be used as voltage regulators, where they are used to regulate the amount of voltage passing through a circuit. This type of circuit is commonly found in power supplies, where it is used to regulate the output voltage to a certain level. This type of application is often used in power supplies that have a wide range of output voltages for different applications.

The FDMT800120DC is an example of a power MOSFET that can be used for the above applications. Its unique characteristics and design make it suitable for use in a variety of applications from switching power supplies to audio amplifiers. Its ability to regulate current flow at low voltages and its low on-resistance make it an ideal choice for high power and high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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