| Allicdata Part #: | FDT86102LZFSTR-ND |
| Manufacturer Part#: |
FDT86102LZ |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 6.6A SOT-223 |
| More Detail: | N-Channel 100V 6.6A (Ta) 2.2W (Ta) Surface Mount S... |
| DataSheet: |  FDT86102LZ Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223-4 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1490pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 28 mOhm @ 6.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.6A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDT86102LZ is a single P-channel Enhancement Mode MOSFET optimized for extremely low RDS(on) perfect for automotive, consumer and industrial applications. This device uses the latest state-of-the-art processing to minimize on-state resistance as well as reduce gate charges and provide rapid switching speeds. This MOSFET has an exceptionally low gate charge and low RDS(on) making it extremely efficient in both on and off state. The FDT86102LZ is designed to be very reliable in high temperature and high voltage environments. This MOSFET can operate at junction and storage temperatures of -55°C to 175°C.
The FDT86102LZ offers a wide range of applications such as load switch, DC-DC converters, motor drivers, DC-DC polarity inverters, power switches, battery management systems, and general high-speed switching applications. This MOSFET is also suitable in power management systems, lighting systems, automotive safety systems, pulse generation and motor drivers, among other things. The FDT86102LZ is also capable of being used in high temperature, high voltage environments due to its high voltage withstand capability and thermal breakdown resistance.
The working principle of the FDT86102LZ is based on the standard operation of a MOSFET. The device consists of three main terminals: the drain, the gate, and the source. Depending on the type of device, it can be either n-channel or p-channel, and the operation of each device type is slightly different. In this case, the FDT86102LZ is a p-channel MOSFET, so its operation is based on a positive gate voltage. When a positive voltage is applied to the gate, the MOSFET is turned on and current flows through the device, otherwise the MOSFET will be off. This device is capable of a very low on resistance due to the new process and design structures. In addition, this device is virtually free from thermal runaway.
The FDT86102LZ is a new generation of low RDS(on) single P-channel Enhancement Mode MOSFET. It is an incredibly efficient switch due to its low gate charge and on-state resistance. This device also offers an exceptionally high voltage withstand capability and thermal breakdown resistance, making it ideal for high temperature and high voltage environments. With its wide range of applications, the FDT86102LZ is perfectly suited for load switch, DC-DC converters, motor drivers, DC-DC polarity inverters, power switches, battery management systems, and general high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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