
Allicdata Part #: | FDT86246TR-ND |
Manufacturer Part#: |
FDT86246 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 2A SOT-223 |
More Detail: | N-Channel 150V 2A (Ta) 2.2W (Ta) Surface Mount SOT... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.34000 |
10 +: | $ 0.32980 |
100 +: | $ 0.32300 |
1000 +: | $ 0.31620 |
10000 +: | $ 0.30600 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 215pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 236 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDT86246 is a type of single field-effect transistor (FET) technology that is used in many different applications today. These include biomedical, aerospace, military, industrial, and automotive applications. FETs are highly reliable and very efficient semiconductors that are used in amplifiers, switching circuits, signal processing, and other electronics products. The FDT86246 has an input voltage range of -20V to 20V and is designed to operate up to 170 kHz.
The FDT86246 has many advantages over other FET technologies. It is highly reliable, has a low current drain, and its low input impedance makes it ideal for various signal processing applications. Its wide dynamic range and low operating temperature allow it to be used in high-performance circuits. It is also used in a variety of power management solutions, where the FET can be used for fast switching and control of power loads.
The FDT86246 also has various features which make it advantageous for many different applications. It is a low-power FET and has a low junction temperature. Its low dynamics enables it to be used in a wide range of operating frequencies and it is also highly robust. Additionally, the FDT86246 is capable of withstanding high temperature and radiation, making it ideal for high-reliability aerospace and military applications.
The FDT86246 works on a number of different principles. Its main principle is the MOSFET, or Metal-Oxide-Semiconductor Field Effect Transistor. This type of transistor works by using a gate to control the flow of electrons in and out of the device. The input to the MOSFET is typically a voltage or current signal, while the gate voltage controls the flow of electrons. The drain and source are used to connect to the components, with the source providing the electrons to the circuit and the drain providing the output of the device.
Another principle used in the FDT86246 is the Low-Voltage-Logic (LVL) technology. This technology uses high-speed logic circuits to enable the device to operate at very low voltages. The LVL technology is often used in ASICs, MOSFETs and other integrated circuits, where the ability to tolerate low power levels is important. Additionally, the LVL technology allows for miniaturization of the FDT86246, enabling the device to be used in a variety of applications.
In addition to the MOSFET and Low-Voltage-Logic technologies, the FDT86246 also has a variety of other useful features. These include a wide supply voltage range and high-speed switching. Additionally, its fast switching capability makes it suitable for use in high-speed communication systems. The FDT86246 is also compatible with a wide range of microcontrollers and digital-to-analog converters, allowing it to be used in a variety of different applications.
The FDT86246 is a versatile FET technology that is used in many different applications today. Its low voltage and high-speed switching capabilities make it ideal for a wide range of applications, from aerospace and military to biomedical device applications. It is highly reliable, low-power, and highly robust, making it ideal in these and other applications. Additionally, its wide dynamic range and low operating temperature ensure it can be used in high-performance circuits.
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