FDT86113LZ

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FDT86113LZ is a type of N-channel PowerMOS™ field-effect transistor (FET). It is designed for power converters and motor control applications. This transistor provides superior gate charge performance over standard power MOSFETs, and it is based on silicon-on-insulator (SOI) technology, which helps to make FDT86113LZ a high-efficiency device with improved circuit performance.

The FDT86113LZ belongs to a family of MOSFETs all of which are based on the same SOI technology. These devices are designed to provide superior gate charge performance over standard MOSFETs, while still allowing for very high efficiency in power converters and motor control applications.

FDT86113LZ is a single-channel FET with a drain-source breakdown voltage (BVdss) rating of 4.5V. It can handle up to 4.5V of drain-source voltage in steady-state condition and it is designed for low-frequency (20 kHz) switching applications. FDT86113LZ has an RDS(ON) of 24.2 mΩ at 4.5V, which makes it suitable for use in power converters operating in the lower power ranges.

FDT86113LZ operates on a principle of field effect. This means that an electric field is generated in the vicinity of the power semiconductor device when an external voltage is applied to the gate electrode. This field creates an electrostatic force between the drain and source terminals, causing the current to flow between them.

FDT86113LZ is typically used in high-efficiency power converters, where low switching losses are especially desirable. Its drain-source resistance of 24.2 mΩ makes it a suitable choice for operating with voltage rails up to 4.5V, allowing efficient operation in a wide range of applications, including dc-dc converters, isolated dc-dc converters, motor control and white goods applications.

In summary, FDT86113LZ is a single-channel FET designed for power converters and motor control applications. It features superior gate charge performance over other FETs and is based on SOI technology for improved circuit performance. It has a drain-source breakdown voltage and RDS(ON) of 4.5V and 24.2 mΩ, respectively, and is suitable for operating with voltages up to 4.5V.

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