FDT86256 Allicdata Electronics
Allicdata Part #:

FDT86256TR-ND

Manufacturer Part#:

FDT86256

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 1.2A SOT-223-4
More Detail: N-Channel 150V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (...
DataSheet: FDT86256 datasheetFDT86256 Datasheet/PDF
Quantity: 4000
Stock 4000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 845 mOhm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDT86256 is a commonly used Field Effect Transistor (FET) intended for a variety of applications. The FDT86256 is a single-field effect transistor (FET) device, and is a type of semiconductor that uses the flow of electrical current to manipulate the flow of electrons between source and drain terminals. The FDT86256 is designed to allow the precise control of electrical current to be passed between two electrodes by controlling the electrical behaviour of the channel between them. The FDT86256 offers an array of useful features and applications, making it an essential piece of technology for many industries.

General Properties of the FDT86256

The FDT86256 is a high-performance transistor that operates in both the linear and saturation regions. It has a small form-factor, and is manufactured on a single-chip with an embedded resistive load for low power operation. The FDT86256 has a maximum drain-source voltage of 500V and a maximum gate-source voltage of 20V, with a breakdown voltage of 200V. It has a maximum current transfer ratio of 60 and a maximum drain current rating of 20A. It can handle a maximum junction temperature of 175°C, and has an on-resistance rating of 350 mΩ. The FDT86256 also has an integrated input protection, making it ideal for applications that require protection from short-term overvoltages.

Applications of the FDT86256

The FDT86256 is an important device for a range of applications. It is a versatile device that can be used in various applications such as power transistors, power MOSFETs, IGBTs and BJTs. It is commonly used in power amplifiers, high voltage DC/DC converters, automotive audio systems and in switching applications as well. The FDT86256 is also often used in telecom, network and consumer applications due to its low power loss, low switching noise and high operating temperature. Additionally, it can be used in various consumer electronics such as TVs and computers, and in industrial automation and robotics applications.

Working Principle of the FDT86256

The FDT86256 is a type of FET that uses the flow of electrical current to control the flow of electrons between source and drain terminals. The device takes advantage of the effect that an electrical current has on the flow of electrons. Essentially, the current creates a field and this field affects the flow of electrons between the source and the drain. With the FDT86256, current can be finely controlled to allow for precise control of electrical current. The device\'s small form factor, and its integrated resistive load make it ideal for low power applications.

Conclusion

The FDT86256 is a single-field effect transistor that offers an array of benefits, making it a practical and useful piece of technology. It is small, has a high current transfer ratio, and a low on-resistance rating. It is an important device for a range of applications, such as power transistors, power MOSFETs, IGBTs and BJTs. Additionally, the FDT86256 uses the flow of electrical current to control the flow of electrons between source and drain terminals. It is a versatile device that is ideal for low power applications, making it an essential device for many industries.

The specific data is subject to PDF, and the above content is for reference

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