FDT86246L Allicdata Electronics

FDT86246L Discrete Semiconductor Products

Allicdata Part #:

FDT86246LTR-ND

Manufacturer Part#:

FDT86246L

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 2A SOT-223
More Detail: N-Channel 150V 2A (Ta) 1W (Ta) Surface Mount SOT-2...
DataSheet: FDT86246L datasheetFDT86246L Datasheet/PDF
Quantity: 1000
4000 +: $ 0.17345
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 228 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDT86246L is a single, P-channel MOSFET transistor with low on-resistance and floating channel. It is commonly used in low- and medium-voltage applications to pass and switch wide-bandgap voltage signals.

This MOSFET transistor is mainly used in power control circuits, such as motor controllers. It is also employed for switching applications, including high-voltage DC-DC converters, ESD protection, and Class D audio amplifiers.

The FDT86246L features a low drain-source on-resistance of 1 ohm (RDS(on)). This high-performance MOSFET can provide a low-resistance path and fast switching time. The low on-time and switching frequency help to reduce operating and switching losses.

The FDT86246L is constructed with a silicon substrate and polysilicon gate that is insulated from the channel by a gate insulator. The channel is completely depleted of charge carriers in the off-state. When a gate voltage is applied, electrons are applied to the channel causing it to become conductive. The FDT86246L has a maximum drain-source breakdown voltage of 40V and output capacitance of 10,000pF.

When operating, the FDT86246L functions at an operating temperature range of -55°C to +150°C. This MOSFET can be used in switching applications with a maximum drain-source voltage of 40 V, a typical gate-source voltage of 5.5 V, and drain current of 2 A.

The FDT86246L MOSFET transistor can be used in a variety of power conversion and switching applications. It is capable of operating at high frequencies and low total gate charge. The low gate-drain capacitance, high frequency operation, and low on-resistance make this device a suitable choice for high-voltage, high-frequency applications.

Overall, the FDT86246L is a low-on-resistance, high-performance MOSFET transistor which is suitable for various power control and switching applications. It has a low gate charge, high frequency operation, and a maximum breakdown voltage of 40V. The device is capable of achieving high switching speeds, low operating and switching losses, and a wide operating temperature range (-55°C to +150°C).

The specific data is subject to PDF, and the above content is for reference

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