
FDT86246L Discrete Semiconductor Products |
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Allicdata Part #: | FDT86246LTR-ND |
Manufacturer Part#: |
FDT86246L |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 2A SOT-223 |
More Detail: | N-Channel 150V 2A (Ta) 1W (Ta) Surface Mount SOT-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
4000 +: | $ 0.17345 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 335pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.3nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 228 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDT86246L is a single, P-channel MOSFET transistor with low on-resistance and floating channel. It is commonly used in low- and medium-voltage applications to pass and switch wide-bandgap voltage signals.
This MOSFET transistor is mainly used in power control circuits, such as motor controllers. It is also employed for switching applications, including high-voltage DC-DC converters, ESD protection, and Class D audio amplifiers.
The FDT86246L features a low drain-source on-resistance of 1 ohm (RDS(on)). This high-performance MOSFET can provide a low-resistance path and fast switching time. The low on-time and switching frequency help to reduce operating and switching losses.
The FDT86246L is constructed with a silicon substrate and polysilicon gate that is insulated from the channel by a gate insulator. The channel is completely depleted of charge carriers in the off-state. When a gate voltage is applied, electrons are applied to the channel causing it to become conductive. The FDT86246L has a maximum drain-source breakdown voltage of 40V and output capacitance of 10,000pF.
When operating, the FDT86246L functions at an operating temperature range of -55°C to +150°C. This MOSFET can be used in switching applications with a maximum drain-source voltage of 40 V, a typical gate-source voltage of 5.5 V, and drain current of 2 A.
The FDT86246L MOSFET transistor can be used in a variety of power conversion and switching applications. It is capable of operating at high frequencies and low total gate charge. The low gate-drain capacitance, high frequency operation, and low on-resistance make this device a suitable choice for high-voltage, high-frequency applications.
Overall, the FDT86246L is a low-on-resistance, high-performance MOSFET transistor which is suitable for various power control and switching applications. It has a low gate charge, high frequency operation, and a maximum breakdown voltage of 40V. The device is capable of achieving high switching speeds, low operating and switching losses, and a wide operating temperature range (-55°C to +150°C).
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