
Allicdata Part #: | FDWS86068-F085-ND |
Manufacturer Part#: |
FDWS86068-F085 |
Price: | $ 0.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | NMOS PWR56 100V 5.8 MOHM |
More Detail: | N-Channel 100V 80A (Tc) 214W (Ta) Surface Mount 8-... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.51945 |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5.1x6.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 214W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2220pF @ 50V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Rds On (Max) @ Id, Vgs: | 6.4 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The FDWS86068-F085 is a type of field-effect transistor (FET) for use in a variety of applications. FETs are transistors constructed from a semiconductor material such as silicon, and are used as switches or amplifiers. FETs are described as unipolar type, having asymmetrical current and voltage characteristics such that they have only one polarity at their gates, either positive or negative. The FDWS86068-F085 is a single-FET, a type of FET that has a single semiconductor channel, and is particularly well-suited for applications where a high voltage needs to be handled. It also works well in applications involving pulsed or switched signals.
The FDWS86068-F085 operates using the principle of the MOSFET or metal-oxide-semiconductor field-effect transistor. The MOSFET is a type of FET consisting of a gate, a source, and a drain -- three parts that use the field-effect principle. This principle involves the application of an electric field to a conducting channel between the source and the drain. The FDWS86068-F085 is a N-channel MOSFET, meaning that it is constructed from a type of silicon in which electrons are the majority carriers. When a voltage is applied to the gate, it creates an electric field. The field then attracts electrons to the area between the source and the gate, creating a conductive channel. This can be used to turn the MOSFET “on” and “off”.
The FDWS86068-F085 is designed to work well in a variety of applications due to its high voltage handling ability and its switching capability. This device can be used as an amplifier in audio systems, transmission systems, and motor drives. It is also used in mobile phones and computers as part of their circuits that sense motion or vibrations. It can also be used in applications involving charging or controlling DC and AC motors, for controlling high voltage circuits, for switching of power supplies, and for switching in high power audio systems.
In summary, the FDWS86068-F085 is a type of FET, specifically a single-FET, designed to be used in high-voltage and switched applications. It works using the MOSFET principle, wherein an electric field is created by applying a voltage to its gate, which creates a conductive channel between the source and the drain. This device can be used in many different applications, including audio systems, wireless phones, motors, and power supplies.
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