FDWS86368-F085 Discrete Semiconductor Products |
|
| Allicdata Part #: | FDWS86368-F085TR-ND |
| Manufacturer Part#: |
FDWS86368-F085 |
| Price: | $ 0.57 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET NCH 80V 80A POWER56 |
| More Detail: | N-Channel 80V 80A (Tc) 214W (Tj) Surface Mount Pow... |
| DataSheet: |  FDWS86368-F085 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.52494 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | Power56 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 214W (Tj) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4350pF @ 40V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| Series: | Automotive, AEC-Q101, PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 80A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDWS86368-F085 field-effect transistor (FET) is designed for a wide array of applications. It is a single N-channel Enhancement Mode MosFET, which is built in a low-cost 6-pin SOT-23 surface-mount package. It is an ideal choice for applications like load switch and adjustable voltage regulators due to its low on-resistance and low gate charge.
The FDWS86368-F085 uses a unique combination of features and advantages that make it suitable for many different kinds of applications. Its low on-resistance enables it to be used in both low and high current applications, while its low gate charge makes it ideal for switching applications. It also features an integrated ESD protection up to 1kV, as well as an improved ESD robustness versus traditional FETs.
The FDSW86368-F085 also has optimized energy efficiency. It has a low static operating current and can handle high temperature operation up to 150°C. This makes the FDSW86368-F085 an excellent choice for applications where power consumption needs to be minimized.
The working principle of the FDWS86368-F085 is based on the use of a gate voltage to control the behavior of the device. The device is constructed with an N-channel region and a P-channel region, separated by a thin oxide layer. When a voltage is applied to the gate of the FDSW86368-F085, the electric field generated causes a depletion of charge carriers in the N-channel region and an accumulation in the P-channel region. This induces an inversion layer at the interface of the N and P-channel regions, allowing the FET to turn on. By controlling the gate voltage, the current flowing through the device can be precisely regulated and the FET can be used as an amplifier or switch.
In summary, the FDSW86368-F085 is an excellent choice for a wide range of applications. Its features, such as its low on-resistance, low gate charge, ESD protection and improved ESD robustness make it suitable for many different applications. Its low static current, high temperature operation and optimized energy efficiency make it an ideal choice for applications where power consumption needs to be minimized. Its working principle makes it very flexible and able to be used either as an amplifier or switch, depending on the desired application.
The FDWS86368-F085 uses a unique combination of features and advantages that make it suitable for many different kinds of applications. Its low on-resistance enables it to be used in both low and high current applications, while its low gate charge makes it ideal for switching applications. It also features an integrated ESD protection up to 1kV, as well as an improved ESD robustness versus traditional FETs.
The FDSW86368-F085 also has optimized energy efficiency. It has a low static operating current and can handle high temperature operation up to 150°C. This makes the FDSW86368-F085 an excellent choice for applications where power consumption needs to be minimized.
The working principle of the FDWS86368-F085 is based on the use of a gate voltage to control the behavior of the device. The device is constructed with an N-channel region and a P-channel region, separated by a thin oxide layer. When a voltage is applied to the gate of the FDSW86368-F085, the electric field generated causes a depletion of charge carriers in the N-channel region and an accumulation in the P-channel region. This induces an inversion layer at the interface of the N and P-channel regions, allowing the FET to turn on. By controlling the gate voltage, the current flowing through the device can be precisely regulated and the FET can be used as an amplifier or switch.
In summary, the FDSW86368-F085 is an excellent choice for a wide range of applications. Its features, such as its low on-resistance, low gate charge, ESD protection and improved ESD robustness make it suitable for many different applications. Its low static current, high temperature operation and optimized energy efficiency make it an ideal choice for applications where power consumption needs to be minimized. Its working principle makes it very flexible and able to be used either as an amplifier or switch, depending on the desired application.
The specific data is subject to PDF, and the above content is for reference
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