Allicdata Part #: | FDWS9408-F085-ND |
Manufacturer Part#: |
FDWS9408-F085 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CHANNEL 40V 80A 8PQFN |
More Detail: | N-Channel 40V 80A (Tc) 214W (Tj) Surface Mount 8-P... |
DataSheet: | FDWS9408-F085 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.61942 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5150pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Today, power transistors are used in many integrated circuits, resulting in reliable operation, high efficiency and small size. Among them, FDWS9408-F085 is one of the most popular transistors. The following mainly introduces the application fields and working principle of FDWS9408-F085.
The FDWS9408-F085 is a single play MOSFET, which belongs to the insulated gate field effect transistor (IGFET). The device is mainly composed of two parts, one is a semiconductor layer and the other is a gate insulator layer. In this way, FDWS9408-F085 features a higher cutoff frequency than the majority of bipolars transistors, and also a lower drain-source resistance at lower drain-source voltages. Both of these characteristics make FDWS9408-F085 suitable for high frequency switching applications.
In general, FDWS9408-F085 is used in applications where high frequency switching is required, such as in switched mode power supplies and motor control circuits. Since it has a low on-state resistance, it can be used to reduce switching losses, making it an ideal choice for these kinds of applications. The device is also used in many other digital circuits, including analog and logic circuit switches, clock drivers, digital clocks, audio switching and amplifier switching.
The FDWS9408-F085 is designed with an oxide insulated gate. This oxide gate provides the insulation layer between the device and the gate voltage, thus controlling the current flow between the source and the drain. In this way, the device can be switched off or on by the applied gate voltage.
The FDWS9408-F085 is typically supplied in a dual package, which includes two terminals for connecting the source and drain and four terminals for connecting the gate, source, drain and substrate. In this way, it can easily be integrated into a circuit, making it simple and fast to construct a circuit.
The FDWS9408-F085 has a low on-state capacitance, which means that it is more suited to high frequency operation. Additionally, the device is designed to operate over a wide range of temperatures, making it suitable for use in a variety of applications.
To sum up, the FDWS9408-F085 is a single-play MOSFET with a low on-state resistance. This makes it suitable for a variety of applications that require high frequency switching, including power supplies, motor control circuits and digital circuits. Additionally, it features a low on-state capacitance, making it suitable for high frequency operation. Most importantly, the device is simple and fast to integrate into a circuit due to the four terminal dual package design.
The specific data is subject to PDF, and the above content is for reference
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