FDWS9508L-F085

Gate Charge (Qg) (Max) @ Vgs:	107nC @ 10V
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PQFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	214W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4840pF @ 20V
Vgs (Max):	±16V
Series:	Automotive, AEC-Q101, PowerTrench®
Vgs(th) (Max) @ Id:	3V @ 250µA
Rds On (Max) @ Id, Vgs:	4.9 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active

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Introduction

The FDWS9508L-F085 MOSFET is a single-channel enhancement-mode field-effect transistor (MOSFET). It is a power MOSFET optimized for use in high-performance, high-bandwidth applications. Its low on-state resistance, low gate charge, and fast switching times make it ideal for use in high-efficiency, high-speed circuits.

Characteristics

• High Power: The device is rated at 5A and 55V, making it suitable for use in high-power applications where large amounts of power need to be switched quickly.
• High Breakdown Voltage: The device can withstand a breakdown voltage of 65V.
• Low On-State Resistance: The device has a low on-state resistance of just 0.6 ohms.
• Low Gate Charge: The gate charge of the device is low and only requires 2.7nC of charge to turn the device on and off.
• Fast Switching Times: The device has an incredibly fast switching time, with a rise time of only 16ns and a fall time of only 24ns.
• Excellent Thermal Performance: The device has an excellent thermal performance and can dissipate up to 79W of power at 25℃.

Application Field and Working Principle

The FDWS9508L-F085 MOSFET is a single-channel enhancement-mode field-effect transistor (MOSFET) and is ideal for use in high-performance, high-bandwidth applications. The device is typically used in high-power applications such as DC-DC converters, inverters, and motor drives as well as in audio, video, and telecommunication applications.The working principle of the device is based on the principle of a field-effect transistor (FET). The device is composed of four layers of semiconductor material: source, drain, gate, and body. When a voltage is applied to the gate, it forms a gate-induced channel between the source and drain. This establishes a current pathway between the source and drain and allows current to flow through the FET. The device is enhanced-mode MOSFET, meaning that it is normally off and must be switched on by applying a positive voltage to the gate terminal. The FDWS9508L-F085 has a low on-state resistance and low gate charge, which results in fast switching times and high efficiency. As a result, the device is well-suited for use in applications which require high-speed power switching. The FDWS9508L-F085 also has a very low maximum on-state voltage drop (Vds(max)), which helps to minimize power dissipation and increase efficiency. Additionally, the device has an excellent thermal performance and can dissipate up to 79W of power at 25°C. In conclusion, the FDWS9508L-F085 MOSFET is an ideal choice for use in high-performance, high-bandwidth applications requiring fast switching, high efficiency, and good thermal performance.

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