FDWS86369-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FDWS86369-F085TR-ND |
Manufacturer Part#: |
FDWS86369-F085 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET NCH 80V 65A POWER56 |
More Detail: | N-Channel 80V 65A (Tc) 107W (Tj) Surface Mount Pow... |
DataSheet: | FDWS86369-F085 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.41008 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | Power56 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 107W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2470pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDWS86369-F085 is a high-performance N-Channel MOSFET field effect transistor designed for a wide range of applications. It has an extremely low RDS(on) resistance of 45mohm, making it suitable for a variety of high-drain switching and high current load operating conditions. This product is manufactured using a leading-edge process and is 100% Tape & Reel tested to ensure the highest quality and performance.
The FDWS86369-F085 is ideal for use in a variety of applications, including DC-DC converters, power switching applications, industrial motor control, and automotive electronics. Its low gate charge and low capacitance makes it an ideal choice for switching high-speed, high-power loads.
The FDWS86369-F085 is a power MOSFET that uses a gate to control the flow of current between the drain and the source. The gate is connected to a gate control signal, which will open the channel when it is at positive voltage, allowing current to flow from the drain to the source. The gate voltage is normally held at zero, thus blocking the conduction of current. This allows the FDWS86369-F085 to switch on and off as needed.
The FDWS86369-F085 offers excellent performance in a low-profile, low-cost package. It is designed for applications requiring high power density, such as power-supply, automotive and industrial controller applications. The device is extremely easy to use, and the high-side voltage control allows the device to be used in various circuit configurations. Additionally, the device has a rugged construction and is designed for harsh environmental conditions.
In order to ensure that the FDWS86369-F085 provides optimal performance, it is important to understand its working principle. When the gate voltage is at a negative voltage, the current is blocked from flowing between the drain and the source. However, when the gate voltage increases to a positive voltage, the current is then allowed to flow between the drain and the source. The positive voltage used to open the transistor is called the Threshold Voltage.
Once the gate voltage is above the threshold voltage, current will flow between the drain and the source until the gate voltage is lowered. The higher the gate voltage, the more current will be allowed to flow. This is why the Operating Voltage of a MOSFET is so important, as it sets the upper limit of the current flow. If the gate voltage is too low, the transistor will not be able to handle the load current and the device may be damaged.
The FDWS86369-F085 is a highly reliable, high-performance power MOSFET designed for a wide range of applications. Its high-speed switching capabilities, low gate charge, and low capacitance make it ideal for high power-density applications. Additionally, the rugged construction and low on-resistance make this an excellent choice for demanding applications. With its advanced process and 100% Tape & Reel testing, the FDWS86369-F085 is sure to provide reliable performance for years to come.
The specific data is subject to PDF, and the above content is for reference
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