
Allicdata Part #: | FESB16ATHE3/81-ND |
Manufacturer Part#: |
FESB16ATHE3/81 |
Price: | $ 0.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 16A TO263AB |
More Detail: | Diode Standard 50V 16A Surface Mount TO-263AB |
DataSheet: | ![]() |
Quantity: | 1000 |
800 +: | $ 0.79876 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 16A |
Voltage - Forward (Vf) (Max) @ If: | 975mV @ 16A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | 175pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | FESB16A |
Description
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FESB16ATHE3/81 is a single rectifier diode suitable for a wide range of applications in power electronic circuits. It has an important role in the operation of circuits in various electronic devices. Its functionality mainly determines the quality of the functioning of an electronic device.The FESB16ATHE3/81 is a fast-recovery rectifier diode with a power dissipation of up to 80 Watts. It has a reverse voltage (Vr) of 1600 Volts and a peak surge current of 5 amperes. The FESB16ATHE3/81 is available in a TO-220 package with a thermal resistance of 3.3°C/W (typical) and is RoHS compliant.The FESB16ATHE3/81 has an on-state voltage (Vf) of 1.1V to 1.25V, a reverse leakage current of 5nA maximum, an inductance (Ls) of 200nH maximum and a junction temperature range of –65° to +150°C. The reverse recovery time (trr) of the diode is typically 4ns. It also has a wide operating temperature range from -55°C to +150°C.ApplicationsFESB16ATHE3/81 is a suitable choice for applications such as high-end AC/DC converters, high-voltage power supplies, snubber circuits, UPS systems, power supplies, chargers, automotive and industrial applications, etc..The FESB16ATHE3/81 is especially suitable for high-power, high-voltage applications, due to its wide operating temperature range and its high reverse voltage. It is a ideal choice for replaced the EMI filter diodes which required high-voltage, fast-recovery operation.Working PrincipleThe FESB16ATHE3/81 is a p-n junction diode. It has a rectifier function which allows it to allow electric current to pass in one direction while blocking current in the other. When a current is applied to the anode of the diode, a forward biased junction is created between the anode and the cathode, thus allowing current to flow through the diode. When the current is removed from the anode, the junction becomes reverse biased and does not allow current to flow.The FESB16ATHE3/81 also has a fast recovery time, which allows the diode to quickly reset, or "shut off," power to the circuit. This is vitally important for applications such as high-power AC/DC converters and snubber circuits. In snubber circuits, the diode must be able to dissipate a large amount of power in a short amount of time, and the FESB16ATHE3/81 is able to do this effectively.ConclusionThe FESB16ATHE3/81 is a single rectifier diode designed for a wide range of applications in power electronic circuits. Its wide operating temperature range, high power dissipation, low inductance, and fast recovery time make it an ideal choice for a variety of applications, including high-power, high-voltage applications such as AC/DC converters, snubber circuits, UPS systems and power supplies. Its rectifier function is vitally important for controlling power to the circuit, allowing current to pass in one direction while blocking current in the other.The specific data is subject to PDF, and the above content is for reference
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FESB16GTHE3/45 | Vishay Semic... | 0.85 $ | 1000 | DIODE GEN PURP 400V 16A T... |
FESB16DTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 200V 16A T... |
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FESB16ATHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FESB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FESB8CTHE3/45 | Vishay Semic... | 0.49 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
FESB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FESB16AT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FESB16GTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 400V 16A T... |
FESB8ATHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
FESB8BTHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB16FTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 300V 16A T... |
FESB8BT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FESB16JT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 600V 16A T... |
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FESB8DT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
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FESB8FTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FESB8DTHE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FESB16HT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 500V 16A T... |
FESB16DTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 200V 16A T... |
FESB16DT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 200V 16A T... |
FESB16CTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 150V 16A T... |
FESB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
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