FESB8ATHE3/81

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	8A
Voltage - Forward (Vf) (Max) @ If:	950mV @ 8A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	35ns
Current - Reverse Leakage @ Vr:	10µA @ 50V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB
Operating Temperature - Junction:	-55°C ~ 150°C

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Diodes - Rectifiers - SingleThe FESB8ATHE3/81 is a single rectifier diode with a high level of efficiency and a low forward voltage drop. It is suitable for use in many applications such as switching power supplies, rectification, and voltage regulation.The FESB8ATHE3/81 has a maximum continuous forward current rating of 2A and a maximum reverse voltage rating of 8V. It is a silicon PN junction diode with a reverse breakdown voltage of about 8 volts. The diode is available in a 4-pin SOT-23 package and has a 1.0mm profile.The FESB8ATHE3/81 is designed to provide a low voltage drop, wide temperature range and high efficiency. The diode is designed to minimize voltage drop and minimize power consumption. The device can also be used in high current applications where power dissipation can be significant.The FESB8ATHE3/81 has several different applications. It can be used for power supply rectification, switching power supplies, voltage regulation, and power distribution. Its low voltage drop and higher efficiency make it ideal for use in power supplies and rectifiers.The FESB8ATHE3/81 is a silicon PN junction diode that has an avalanche breakdown voltage of 8V. This breakdown voltage will typically decrease when the diode is at higher temperatures. The breakdown voltage, however, can be affected by temperature, material composition, and the thickness of the N-type material.The FESB8ATHE3/81 has a reverse current rating of 8V and a forward voltage drop of 350mV. This forward voltage drop is considerably lower than the reverse breakdown voltage, which makes the diode more efficient than other rectifier diodes.The device has a junction capacitance of about 0.4 pF and a junction temperature of about 125°C. The thermal characteristics of the diode are good and can be used in high-temperature applications. The junction temperature should not exceed the rated temperature of 125°C.The FESB8ATHE3/81 has two variations. The first version is a high current diode with a forward voltage drop of 350mV. This version is ideal for applications that require high current such as switching power supplies and voltage regulation. The second version is a low current diode with a forward voltage drop of 450mV. This version is suitable for applications requiring low current such as power distribution.In summary, the FESB8ATHE3/81 is a single rectifier diode with a high level of efficiency and a low forward voltage drop. It is designed to minimize voltage drop and minimize power consumption. The diode is available in two variations and has a 1.0mm profile. It is designed to provide a low voltage drop, wide temperature range, and high efficiency and is suitable for use in power supplies, rectification, and voltage regulation applications.

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