| Allicdata Part #: | FESB16JTHE3/81-ND |
| Manufacturer Part#: |
FESB16JTHE3/81 |
| Price: | $ 0.89 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 600V 16A TO263AB |
| More Detail: | Diode Standard 600V 16A Surface Mount TO-263AB |
| DataSheet: | FESB16JTHE3/81 Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 0.79876 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600V |
| Current - Average Rectified (Io): | 16A |
| Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 16A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 50ns |
| Current - Reverse Leakage @ Vr: | 10µA @ 600V |
| Capacitance @ Vr, F: | 145pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263AB |
| Operating Temperature - Junction: | -65°C ~ 150°C |
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The FESB16JTHE3/81 is a single rectifier diode with a wide range of applications, from controlling flow in circuit boards to stabilizing power supply voltage and protection against reverse current. This device is perfect for both high-frequency circuits and low-frequency applications, as its features are capable of responding to both frequencies.
Generally speaking, the FESB16JTHE3/81 is a silicon-based fast recovery type rectifier diode that has been designed using the idealized schematic of the reverse-biased diode. It is a three-terminal device, with the anode and cathode terminals connected to the semiconductor material and a third terminal allowing the connection of external components to control the current flow. With its three terminals, the device can be operated in either forward or reverse bias mode, allowing for a greater degree of flexibility as to the way that current can be managed and controlled.
The FESB16JTHE3/81 has a high-speed turn-on and turn-off time, with a maximum reverse recovery time of 100 nanoseconds. This makes it ideal for use in high-frequency circuits, as the device is able to quickly and accurately switch the current direction for any given stage of the circuit’s operation. This helps to ensure that the circuit does not suffer from any unwanted effects such as sluggish performance or noise caused by lag in the current switching process.
In addition, the device also features a high maximum forward voltage rating of 800 volts. This allows the device to handle large surge voltages without sustaining any damage, making it well suited to use in any power supply designs involving AC or DC current. This allows the device to provide efficient power regulation and stable voltage output, essential when attempting to maintain a constant voltage between two power rails.
Furthermore, the device is able to protect against excessive current draw, as it has the capability of limiting the amount of current that can pass through it. This feature helps to reduce damage to the downstream components, particularly in the instance of short-circuits occurring within the circuit. By limiting the amount of current that can pass through the device during such events, the device can effectively act as a protective buffer to the downstream components.
Additionally, the device’s reverse current protection ensures that there is no back in the current direction, which again helps to prevent any unwanted current from damaging the downstream components. This feature helps to ensure that the power supply remains insulated from external sources, allowing for the appropriate and safe operation of the circuit.
Overall, the FESB16JTHE3/81 is a single rectifier diode with a wide range of applications. With its reverse current protection and high maximum forward voltage rating, it is ideal for use in power supply designs, as well as high-frequency circuits. The device’s quick turn-on and turn-off time and ability to limit current draw make it an invaluable part of any circuit design, helping to provide efficient power regulation, stable voltage output and effective protection against reverse current.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FESB16DT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB16GT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 400V 16A T... |
| FESB16BT-E3/45 | Vishay Semic... | 0.69 $ | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB16BT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB8BT-E3/45 | Vishay Semic... | 0.47 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB16ATHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
| FESB8FTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
| FESB16FT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 300V 16A T... |
| FESB8GTHE3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
| FESB8GT-E3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
| FESB16BTHE3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB16HTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 500V 16A T... |
| FESB16CTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 150V 16A T... |
| FESB16FT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 300V 16A T... |
| FESB8JTHE3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
| FESB8DT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
| FESB8CTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
| FESB16DT-E3/45 | Vishay Semic... | 1.2 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB8FTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
| FESB8CT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
| FESB8HT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
| FESB16GTHE3/45 | Vishay Semic... | 0.85 $ | 1000 | DIODE GEN PURP 400V 16A T... |
| FESB16DTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB16HT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 500V 16A T... |
| FESB8DTHE3/45 | Vishay Semic... | 0.47 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
| FESB8GTHE3/81 | Vishay Semic... | 0.56 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
| FESB16AT-E3/81 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
| FESB16GTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 400V 16A T... |
| FESB8ATHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
| FESB8BTHE3/45 | Vishay Semic... | 0.43 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB16FTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 300V 16A T... |
| FESB16JT-E3/81 | Vishay Semic... | 0.65 $ | 1000 | DIODE GEN PURP 600V 16A T... |
| FESB8BT-E3/81 | Vishay Semic... | 0.52 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB16DTHE3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 200V 16A T... |
| FESB16CT-E3/45 | Vishay Semic... | 0.6 $ | 1000 | DIODE GEN PURP 150V 16A T... |
| FESB8BTHE3/81 | Vishay Semic... | 0.55 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
| FESB8HTHE3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
| FESB16BTHE3/45 | Vishay Semic... | 0.85 $ | 1000 | DIODE GEN PURP 100V 16A T... |
| FESB8FT-E3/81 | Vishay Semic... | 0.54 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
| FESB16JTHE3/81 | Vishay Semic... | 0.89 $ | 1000 | DIODE GEN PURP 600V 16A T... |
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FESB16JTHE3/81 Datasheet/PDF