FF450R06ME3BOSA1 Allicdata Electronics
Allicdata Part #:

FF450R06ME3BOSA1-ND

Manufacturer Part#:

FF450R06ME3BOSA1

Price: $ 92.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 450A
More Detail: IGBT Module Trench Field Stop 2 Independent 600V 5...
DataSheet: FF450R06ME3BOSA1 datasheetFF450R06ME3BOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 84.02240
Stock 1000Can Ship Immediately
$ 92.43
Specifications
Series: --
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 550A
Power - Max: 1250W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 450A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 28nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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Transistors - IGBTs - Modules

The FF450R06ME3BOSA1 Intelligent High Power Module is a high-performance power module that can help build a wide range of power electronics systems. It is used in a variety of applications, ranging from automotive electric propulsion systems to industrial process control systems.The FF450R06ME3BOSA1 Intelligent High Power Module is a three-phase, four-level power module with an integrated power stage and advanced protection features. The power module allows the user to create a complete power stage, with voltage and current monitoring, fault detection and over-temperature protection.The FF450R06ME3BOSA1 Intelligent High Power Module is an all-in-one solution for high power requirements. It is designed to provide high-efficiency operation, with a low RFI/EMI and low switching losses. The module is based on IGBTs (Insulated Gate Bipolar Transistor), which are reliable and robust semiconductor devices that are used to control electric power. IGBTs were designed to provide improved electrical performance over MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and other available power transistor designs.The FF450R06ME3BOSA1 Intelligent High Power Module utilizes advanced protection features for improved safety and reliability. The module integrates fault detection and monitoring, as well as over-temperature protection, in order to protect the system from potential damage. The module also includes voltage and current monitoring, as well as over-stress protection in order to protect the system from potential damage caused by current spikes or over-voltage.The FF450R06ME3BOSA1 Intelligent High Power Module is optimized for maximum power efficiency and has been tested in a variety of applications ranging from industrial motor drives to photovoltaic inverters. The module combines high current capacity, low switching losses, and extremely compact size.The FF450R06ME3BOSA1 Intelligent High Power Module is also used in a wide range of industrial applications. It is ideal for controlling industrial motors, for example, as it is capable of handling high currents and delivers high efficiency under a wide range of operating conditions. The module is also used in many applications in the renewable energy sector. It is ideal for controlling photovoltaic inverters, as it provides efficient operation and protection from over-temperature and over-current.The FF450R06ME3BOSA1 Intelligent High Power Module is an ideal solution for any industrial applications where high power and reliability are required. Its high-efficiency operation, combined with advanced protection features, make it an ideal way to build reliable, high-performance systems.

The specific data is subject to PDF, and the above content is for reference

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