FF450R12KE4EHOSA1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	520A
Power - Max:	2400W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 450A
Current - Collector Cutoff (Max):	5mA
Input Capacitance (Cies) @ Vce:	28nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction

FF450R12KE4EHOSA1 is an insulate-gate bipolar transistor (IGBT) module with medium voltage rating, on-state blocking capability, and high current capacity. It is a type of power semiconductor component used in various applications, ranging from renewable energy conversion and motor control, to industrial automation and power conversion systems. It is composed of many IGBTs – typically 4 in series – and comes in a number of package types, such as the FF450R12KE4EHOSA1, which is a Class-T module with a two-bolt fastening flange. This article will explore the applications and working principle of the FF450R12KE4EHOSA1 module.

Applications

IGBT modules like the FF450R12KE4EHOSA1 are widely used in a variety of applications, from microcontrollers and inverters to motor controls, converters, and renewable energy systems. Due to its low-loss construction and low-drift forward voltage drop characteristics, the FF450R12KE4EHOSA1 is well-suited for use in high-power applications. It has an isolated base and a TO-247-4 package, and its medium voltage rating makes it ideal for use in renewable energy and motor control applications. In addition, its high current capacity, low on-state voltage losses, and fast switching capabilities make it suitable for use in power converters and industrial automation systems. The FF450R12KE4EHOSA1 can also be used in power grid systems that require fast transient response times and rapid transformer protection. Furthermore, it is suitable for use in harsh environments, including temperature ranges of up to 125°C, a humidity level of up to 95%, and a maximum operating altitude of up to 5000m above sea level.

Working Principle

The FF450R12KE4EHOSA1 module is a four-channel IGBT module, which means that it consists of four NPN IGBTs (also known as IGBT cells or channels) in series. IGBTs are power semiconductor devices that are composed of two components – n-type and p-type semiconductors – which are connected inversely. Each individual IGBT cell acts like a switch, allowing current to flow through when it is ‘on’ and blocking current flow when it is ‘off’. In the FF450R12KE4EHOSA1, all four IGBTs are connected in series to form a single power module. The module works by controlling the voltage that is applied to the base of the IGBTs. When the voltage of the applied field is low, the IGBT will be ‘on’ and current will flow through. When the voltage of the applied field is high, the IGBT will be ‘off’, preventing current flow. This way, the IGBTs in the FF450R12KE4EHOSA1 can be used to control voltage and current in applications like motor control, inverters, and power conversion systems.

Conclusion

The FF450R12KE4EHOSA1 is a type of four-channel IGBT module that can be used in a variety of applications, from microcontrollers and inverters to motor controls, converters, and renewable energy systems. Its medium voltage rating and high current capacity make it suitable for use in harsh environments and high-power applications, and its low on-state voltage losses and fast switching capabilities make it ideal for power grid systems that require rapid transient response times and transformer protection. The module works by controlling the voltage that is applied to the base of the IGBTs, allowing it to regulate voltage and current in applications like motor control, inverters, and power conversion systems.

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