FF450R12ME4PB11BOSA1 Allicdata Electronics
Allicdata Part #:

FF450R12ME4PB11BOSA1-ND

Manufacturer Part#:

FF450R12ME4PB11BOSA1

Price: $ 126.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 450A
More Detail: IGBT Module Trench Field Stop 2 Independent 1200V ...
DataSheet: FF450R12ME4PB11BOSA1 datasheetFF450R12ME4PB11BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 115.40100
Stock 1000Can Ship Immediately
$ 126.95
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 450A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 28nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FF450R12ME4PB11BOSA1 is a module based on the Insulated Gate Bipolar Transistor (IGBT) technology. This IGBT module is specialized for a number of industrial applications, and this article focuses on its application field and working principle.

Applications

The FF450R12ME4PB11BOSA1 module is most suitable for applications where a reliable power source is needed. This includes industrial purposes, such as motor drives and welding equipment, as well as commercial purposes, such as elevators and compressors. It can even be used in the home. In all of these cases, it offers reliable power that can be improved upon, thanks to its low operating power consumption and noise dampening design.

The module is also designed for safety. It requires no external cooling system, as it keeps its internal temperature under control with its built-in sensor system. This protects the device from any potential damage that may arise from overheating. In addition, the IGBT module is equipped with over-current protection, allowing it to prevent any spikes from harming the device.

Working Principle

At its core, the module is a combination of a transformer and an IGBT. The IGBT is responsible for switching the currents in the circuit, while the transformer converts the alternating current into direct current. The IGBT is made out of a semi-insulated gate that is responsible for controlling the current flow in the device. It does this by increasing or decreasing the voltage threshold depending on the voltage that is being applied to the gate.

The FF450R12ME4PB11BOSA1 module operates by using an insulated gate bipolar transistor (IGBT). When an appropriate voltage is applied to the gate, it causes a current to flow in the circuit, allowing the device to switch between two different states. This is what allows the module to operate efficiently and reliably in the applications that it was designed for.

Conclusion

The FF450R12ME4PB11BOSA1 is a specialized IGBT module that provides reliable and efficient power in a variety of applications. It is designed to be safe and require no external cooling system. At its core, the device is a combination of a transformer and an IGBT, which works by applying an appropriate voltage to the gate, causing a current to flow in the circuit and allowing the device to switch between two states.

The specific data is subject to PDF, and the above content is for reference

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