FF450R17ME4PB11BOSA1 Allicdata Electronics
Allicdata Part #:

FF450R17ME4PB11BOSA1-ND

Manufacturer Part#:

FF450R17ME4PB11BOSA1

Price: $ 170.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 450A
More Detail: IGBT Module Trench Field Stop 2 Independent 1700V ...
DataSheet: FF450R17ME4PB11BOSA1 datasheetFF450R17ME4PB11BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 154.86500
Stock 1000Can Ship Immediately
$ 170.35
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 450A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 36nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FF450R17ME4PB11BOSA1 is a 1200V, 450A, 17mohm IGBT module that is used in a variety of different industrial and computing applications. This type of IGBT module is a highly-versatile device that can be used in power conversion, as well as in drives, motors, and other industrial applications. It has many benefits over traditional silicon-based IGBTs, including higher power efficiency, lower power dissipation, and improved reliability.

Application Field

The FF450R17ME4PB11BOSA1 has been designed specifically for use in electrical drives. It is ideal for use in motor control, DC-DC converters, LED lighting, motor control applications, uninterruptible power supplies, aerospace, and other industrial applications. The module features a high-current rating and low on-resistance characteristics, along with a robust aluminum substrate and low thermal impedance.

Due to its low power dissipation and high efficiency, the FF450R17ME4PB11BOSA1 can help to reduce the size, weight, and heat generated by motor systems in industrial applications, while still providing reliable operation. The module is also suitable for medium and high power applications, as it can work with high temperatures and currents up to 1200 Volts. This makes it an ideal choice for a wide range of industrial applications.

Working Principle

The FF450R17ME4PB11BOSA1 operates on the principle of an IGBT (insulated gate bipolar transistor). This type of transistor allows for the efficient control of power when used in drive applications. The IGBT is most often used to convert energy from AC to DC and vice versa, as well as to provide switching capabilities in areas such as motor control.

When an IGBT module is used in a drive application, it uses a gate-control signal to turn the current on and off. The gate signal switches the current in the IGBT between ON and OFF states, which allows for the efficient control of power in the system. Additionally, the IGBT is capable of switching the current between the two states very quickly at high frequencies.

When an IGBT module such as the FF450R17ME4PB11BOSA1 is used in a motor control application, it can provide improved accuracy and responsiveness compared to traditional silicon-based IGBTs. Additionally, the module is capable of providing reliable operation even in high power applications.

The FF450R17ME4PB11BOSA1 module is a versatile and reliable device that can be used in many different industrial and computing applications. Its low power dissipation and high efficiency make it an ideal choice for motor control and DC-DC converter applications. Furthermore, its high current and low on-resistance characteristics make it an excellent choice for applications that require reliable and efficient power management.

The specific data is subject to PDF, and the above content is for reference

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