Allicdata Part #: | FF450R12IE4BOSA2-ND |
Manufacturer Part#: |
FF450R12IE4BOSA2 |
Price: | $ 261.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 450A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | FF450R12IE4BOSA2 Datasheet/PDF |
Quantity: | 1000 |
3 +: | $ 238.07100 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 450A |
Power - Max: | 2550W |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 450A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 27nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FF450R12IE4BOSA2 is an IGBT module that is used in a wide variety of applications. It is part of a family of IGBTs (Insulated Gate Bipolar Transistors) that have been designed to work in power management systems. The FF450R12IE4BOSA2 is also capable of providing a high degree of system protection due to its integrated circuitry.
The FF450R12IE4BOSA2 features a continuous current of 450 Amperes and a DC blocking voltage of 1.2kV. It is designed with a 3-in-1 package which comes with the integrated freewheeling diode and an additional fast circuit-breaker diode. This module is capable of operation at up to 125 ° C and they are RoHS compliant.
In terms of applications, the FF450R12IE4BOSA2 is typically used in high-efficiency power conversion systems, such as in power electronics applications, motor drives, and photovoltaic inverters. In these applications, it helps to reduce energy losses, improve system reliability and protect other internal components from power fluctuations. Additionally, the FF450R12IE4BOSA2 can also be used in renewable energy systems, such as wind or solar, to regulate the current supply.
The FF450R12IE4BOSA2 works on the principle of bipolar junction transistor (BJT). This transistor relies on the "push-pull" of two transistors to form a path for current to move from one side to the other. The electrons from the base of one transistor are accelerated through the collector of the other transistor, creating an electrical current. In the case of the FF450R12IE4BOSA2, this "push-pull" action is used to regulate the current and voltage output within the specified application.
In addition to its high current-carrying capacity and high voltage-blocking capability, the FF450R12IE4BOSA2 also features a low on-state voltage drop, low gate charge, and low device capacitance. This allows for more efficient power conversion, which helps to reduce energy losses and improve system performance. Moreover, the device also features built-in short-circuit protection, over-current protection, and other safety features to ensure stable performance in high-power applications.
The FF450R12IE4BOSA2 is a versatile and reliable IGBT module that is applicable for a variety of demanding power applications. Its features make it an ideal choice for those looking for a low-cost, high-efficiency solution for their power management systems.
The specific data is subject to PDF, and the above content is for reference
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