FF450R17ME4B11BOSA1 Allicdata Electronics
Allicdata Part #:

FF450R17ME4B11BOSA1-ND

Manufacturer Part#:

FF450R17ME4B11BOSA1

Price: $ 162.64
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 450A
More Detail: IGBT Module Trench Field Stop 2 Independent 1700V ...
DataSheet: FF450R17ME4B11BOSA1 datasheetFF450R17ME4B11BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 147.85700
Stock 1000Can Ship Immediately
$ 162.64
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 600A
Power - Max: 2500W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 36nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FF450R17ME4B11BOSA1 Transistors - IGBTs - Modules are high-performance switching semiconductor devices that are used in industrial and commercial applications. They are designed to offer superior energy efficiency while still being able to provide high levels of power management. This is achieved by their ability to switch off and on quickly and efficiently, without the need for large amounts of energy.

FF450R17ME4B11BOSA1 Transistors - IGBTs - Modules are commonly used in a wide range of applications such as power distribution, motor control, solenoid control, and robotics. They can be used as switches in high-power circuits as well as for providing power for delicate and sensitive equipment. The main components of FF450R17ME4B11BOSA1 transistors are two transistors, a gate-switch to turn the transistor on or off, and an input voltage to the gate-switch.

The gate-switch is connected to the input voltage and acts like a switch to allow the current to pass through the transistor when it is turned on and off. When the current passes through the transistor, it creates an alternating current in the circuit, which is then regulated by the output voltage of the transistor. This is what allows the transistor to provide the power necessary to control the equipment.

The power management provided by FF450R17ME4B11BOSA1 transistors is due to the ability to switch off and on quickly and efficiently, without the need for a large amount of energy. These transistors are also commonly used in high-power circuits, as the current can pass through the transistor without the need for a large amount of energy to turn it on or off. Additionally, since these transistors are designed to be very efficient, they can offer superior levels of power management at lower costs than other types of transistors.

The main features of FF450R17ME4B11BOSA1 transistors are their high-performance switching capability, their high efficiency, and their low cost. These features make them ideal for a wide range of applications, including motor control, solenoid control, robotics, and high-power circuits. Additionally, the small size of these transistors allows them to be used in smaller spaces, such as in small electronic devices.

In conclusion, the FF450R17ME4B11BOSA1 Transistors - IGBTs - Modules offer superior levels of performance when it comes to providing efficient power management in industrial and commercial applications. They are designed to be efficient, reliable, and cost-effective, making them a great choice for a variety of applications. Additionally, their small size allows them to be used in small spaces, such as in small electronic devices.

The specific data is subject to PDF, and the above content is for reference

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