Allicdata Part #: | FF450R07ME4B11BOSA1-ND |
Manufacturer Part#: |
FF450R07ME4B11BOSA1 |
Price: | $ 96.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 450A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 650V 5... |
DataSheet: | FF450R07ME4B11BOSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 87.87660 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 560A |
Power - Max: | 1450W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 450A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 27.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBT Modules are one of the most popular transistor devices on the market due to their efficiency, low operating temperature, and low cost. The FF450R07ME4B11BOSA1 is a non-isolated half-bridge IGBT module with a rated blocking voltage of 450V and a peak reverse voltage of 740V. This device offers a wide range of application fields and working principles.
Application Fields
One of the biggest advantages of IGBT modules is their versatility in application fields. FF450R07ME4B11BOSA1 is used in a variety of industrial, automation and consumer electronics applications, from lighting and heating controls to motor control and variable speed adjustment. Its wide blocking voltage range ensures compatibility with many power supplies, such as DC motors and AC motors.
This device is also used in solar panel inverters, power converters and AC welding applications due to its high efficiency. Its low operating temperature of about 75°C, combined with its high switching speed, makes it ideal for devices with tight thermal constraints, such as low-power switching regulators.
Working Principle
The FF450R07ME4B11BOSA1 comprises two MOSFET transistors and four large charge-sinking diodes to prevent reverse current flow. The transistors are connected in series, forming a p-channel and an n-channel half-bridge. When the gate drive voltage of the device is exceeded, the two switches are forced into conduction and the power is transferred from the p-channel to the n-channel of the module.
The four diodes act as a buffer between the two switches. If a reverse current flow is detected, the diode quickly clamps the voltage to prevent damage. This device achieves its exceptionally high efficiency by eliminating the need for a transformer and significantly reducing the amount of heat dissipated in the system.
The FF450R07ME4B11BOSA1 also offers a wide range of control options. The device can be triggered in either pulse-width modulation (PWM) or resonant-mode converters. In both cases, the gate drive voltage is set to a level which ensures the desired conduction of current.
In summary, the FF450R07ME4B11BOSA1 is an ideal non-isolated half-bridge IGBT module for a wide range of applications. Its excellent efficiency, low operating temperature, and wide blocking voltage range ensure compatibility with many different power supplies. These features, combined with its robust construction and flexible control options, make it an ideal choice for a variety of industrial, automation, and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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