FF450R07ME4B11BOSA1 Allicdata Electronics
Allicdata Part #:

FF450R07ME4B11BOSA1-ND

Manufacturer Part#:

FF450R07ME4B11BOSA1

Price: $ 96.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 450A
More Detail: IGBT Module Trench Field Stop 2 Independent 650V 5...
DataSheet: FF450R07ME4B11BOSA1 datasheetFF450R07ME4B11BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 87.87660
Stock 1000Can Ship Immediately
$ 96.67
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 560A
Power - Max: 1450W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 27.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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IGBT Modules are one of the most popular transistor devices on the market due to their efficiency, low operating temperature, and low cost. The FF450R07ME4B11BOSA1 is a non-isolated half-bridge IGBT module with a rated blocking voltage of 450V and a peak reverse voltage of 740V. This device offers a wide range of application fields and working principles.

Application Fields

One of the biggest advantages of IGBT modules is their versatility in application fields. FF450R07ME4B11BOSA1 is used in a variety of industrial, automation and consumer electronics applications, from lighting and heating controls to motor control and variable speed adjustment. Its wide blocking voltage range ensures compatibility with many power supplies, such as DC motors and AC motors.

This device is also used in solar panel inverters, power converters and AC welding applications due to its high efficiency. Its low operating temperature of about 75°C, combined with its high switching speed, makes it ideal for devices with tight thermal constraints, such as low-power switching regulators.

Working Principle

The FF450R07ME4B11BOSA1 comprises two MOSFET transistors and four large charge-sinking diodes to prevent reverse current flow. The transistors are connected in series, forming a p-channel and an n-channel half-bridge. When the gate drive voltage of the device is exceeded, the two switches are forced into conduction and the power is transferred from the p-channel to the n-channel of the module.

The four diodes act as a buffer between the two switches. If a reverse current flow is detected, the diode quickly clamps the voltage to prevent damage. This device achieves its exceptionally high efficiency by eliminating the need for a transformer and significantly reducing the amount of heat dissipated in the system.

The FF450R07ME4B11BOSA1 also offers a wide range of control options. The device can be triggered in either pulse-width modulation (PWM) or resonant-mode converters. In both cases, the gate drive voltage is set to a level which ensures the desired conduction of current.

In summary, the FF450R07ME4B11BOSA1 is an ideal non-isolated half-bridge IGBT module for a wide range of applications. Its excellent efficiency, low operating temperature, and wide blocking voltage range ensure compatibility with many different power supplies. These features, combined with its robust construction and flexible control options, make it an ideal choice for a variety of industrial, automation, and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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