FF450R12ME4PBOSA1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	450A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 450A
Current - Collector Cutoff (Max):	3mA
Input Capacitance (Cies) @ Vce:	28nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FF450R12ME4P BOSA IGBT ModulesIGBT (Insulated-Gate Bipolar Transistor) Modules play a vital role in a wide range of applications. FF450R12ME4P BOSA IGBT Modules are perfect for use in inverter applications, their highly desirable characteristics making them ideal for automation, industrial, and medical applications. In this article, we will be exploring the field of application and working principle of FF450R12ME4P BOSA IGBT Modules. FF450R12ME4P BOSA IGBT Modules are comprised of an Insulated Gate Bipolar Transistor (IGBT) coupled with a fast-switching diode in one package. The IGBT in the FF450R12ME4P BOSA IGBT Modules features an easy-to-control transistor gate and is optimized to provide low switching losses and excellent avalanche energy handling. It is highly reliable, with a high load current capability (ranging from 7 to 12 A in a shielded case) and excellent electromechanical characteristics. The IGBT in the modules is a 6-pin device, with two of the pins functioning as a switching node and four pins giving access to the drain and source terminals of the IGBT. As for the diode, it is protected by a thick resin enclosure and is rated for 6A. The key advantage of FF450R12ME4P BOSA IGBT Modules is their ability to provide clean, reliable control of power in the 10kHz range. This makes them ideal for use in industrial applications, medical equipment, and other areas where precision control is required. The modules also offer an extremely low on-resistance, meaning they are capable of handling high power loads with low power losses. Additionally, they are designed to operate in harsh environments, and are capable of withstanding temperatures ranging from -40° to 105° Celsius. When it comes to the working principle of FF450R12ME4P BOSA IGBT Modules, it is fairly straightforward. The module consists of two main components, the IGBT and the Fast-Switching Diode. When power is supplied to the module, the IGBT turns on and creates an electrical connection between the source and the drain. This connection allows current to flow from the source to the drain, and the diode ensures that no current flows back the other way. The IGBT is controlled by an insulated gate, which allows the user to switch the IGBT on and off. This is particularly useful in applications where precision is required, such as motor drives and UPS systems. In conclusion, FF450R12ME4P BOSA IGBT Modules are highly reliable and offer excellent performance in a wide range of applications. They are ideal for inverter applications and provide clean, reliable control of power in the 10kHz range. The IGBTs are easy to control with an insulated gate and feature an extremely low on-resistance and can handle high power loads with low losses. Additionally, the module is designed to withstand temperatures ranging from -40° to 105° Celsius, making it suitable for use in a range of environments.

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