FF450R17ME3BOSA1

Series:	EconoDUAL™ 3
Part Status:	Not For New Designs
IGBT Type:	Trench Field Stop
Configuration:	Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):	1700V
Current - Collector (Ic) (Max):	605A
Power - Max:	2250W
Vce(on) (Max) @ Vge, Ic:	2.45V @ 15V, 450A
Current - Collector Cutoff (Max):	3mA
Input Capacitance (Cies) @ Vce:	40.5nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction

FF450R17ME3BOSA1 is an insulated gate bipolar transistor (IGBT) module from Infineon Technologies. It provides an ultra-low switching loss and soft output voltage waveforms. It is designed for a wide range of applications like motor drives, UPS and solar Inverter. It functions as a switch that can act as a bridge between the power source to the load. It works as a switch because it is capable of blocking the current in both directions, ensuring excellent current and thermal management.

Application Field

FF450R17ME3BOSA1 is suitable for a variety of applications due to its ability to perform at low losses and from a wide range of power sources. It can be used for motor drives, lighting, soft starters, home appliances, industrial automation and machine tools. The high switching frequency of the module gives it the ability to control a wide range of frequencies which makes it very flexible in the way it can be used.The maximum permissible current is 40 A and the maximum voltage is 1700 V. It can handle large voltages and currents with very low losses. This makes it suitable for applications requiring fast and accurate switching. The module also supports a wide range of switching frequencies, so it can be used for a number of different applications.

Working Principle

The FF450R17ME3BOSA1 is an insulated gate bipolar transistor (IGBT) module from Infineon Technologies. It is a type of power semiconductor device. It operates by switching the voltage across the device on and off at a very high frequency. This is done with an electrical current between the two terminals of the module. When the current passes between the terminals, it creates a magnetic field in the device, which forces the transistor to switch on. This in turn causes the voltage across it to drop. When the current is no longer being applied, the transistor switches off, and the voltage rises again. This provides the switching action of an IGBT.

Conclusion

The FF450R17ME3BOSA1 IGBT module from Infineon Technologies is a reliable and powerful choice for a wide range of applications. It is capable of controlling high voltages and currents with very low losses. The module has a wide range of switching frequencies, allowing it to be used in a variety of applications. It is also an economical choice due to its low-switching losses.

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