Allicdata Part #: | FF450R17IE4BOSA2-ND |
Manufacturer Part#: |
FF450R17IE4BOSA2 |
Price: | $ 283.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 450A |
More Detail: | IGBT Module 2 Independent 1700V 620A 2800W Chassi... |
DataSheet: | FF450R17IE4BOSA2 Datasheet/PDF |
Quantity: | 1000 |
3 +: | $ 257.35100 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 620A |
Power - Max: | 2800W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 450A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 36nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FF450R17IE4BOSA2 module is a thirteenth generation IGBT (Insulated Gate Bipolar Transistor) module designed primarily for the power electronics market. As one of the most advanced IGBT modules currently available, the FF450R17IE4BOSA2 module has several key features that make it an essential choice in power electronics applications.
The most prominent feature of the FF450R17IE4BOSA2 module is its ability to operate at ultra-high frequencies, which allows for faster switching speeds and improved efficiency in applications such as motor control. Additionally, this new generation of IGBT modules offers improved thermal management and a very low gate charge, making it an ideal choice for high-current applications.
The FF450R17IE4BOSA2 module is primarily used in applications that require low voltage, high current, or both. A few examples of these applications are uninterruptible power supplies, EVs, applied inverters, and load switching systems. Additionally, these modules can be employed in applications that require high-frequency switching, such as converter/inverter systems and AC/DC drives. Thanks to its high-speed switching, the FF450R17IE4BOSA2 module has been proven to improve power quality in various EV systems compared to other IGBT modules.
The basic working principle of the FF450R17IE4BOSA2 module is the same as that of other IGBTs, meaning that it is based on the PN-junction theory of transistors. When the gate of the transistor is activated, current flows through an insulated gate and across a controlled transistor channel. This creates an electric field, which attracts electrons that move from a negative to a positive layer and cause current to flow from the source to the drain. The gate voltage and current contribute to the control of the electric field, allowing for fast switching speeds and improved efficiency.
In conclusion, the FF450R17IE4BOSA2 module is an advanced thirteenth generation IGBT module designed for use in the power electronics market. It is renowned for its high speed switching capabilities and excellent thermal management, making it ideal for high-current applications. Additionally, its basic working principle is based on the PN-junction theory of transistors, resulting in improved efficiency when compared to other IGBT modules. Therefore, the FF450R17IE4BOSA2 module is becoming increasingly popular in the power electronics space.
The specific data is subject to PDF, and the above content is for reference
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