Allicdata Part #: | FF600R06ME3BOSA1-ND |
Manufacturer Part#: |
FF600R06ME3BOSA1 |
Price: | $ 107.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 600A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 600V 7... |
DataSheet: | FF600R06ME3BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 98.01400 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 700A |
Power - Max: | 1650W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 600A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 39nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF600R06ME3BOSA1 Application Field and Working Principle
FF600R06ME3BOSA1 is a member of International Rectifier’s IGBT family. It is a four-terminal, insulated-gate bipolar transistor (IGBT) module in an insulated metal plate with an integrated gate driver, based on the latest chip technology. This transistor belongs to the family of modular devices and has a wide application field.
The FF600R06ME3BOSA1 can be used for a variety of applications. Its high input impedance and high-speed switching speed make it suitable for high-power switching and amplifier applications. It can also be used for motor control in industrial automation, microwave applications, and domestic appliances. In general, it can be used in any application where a transistor is required. It is also suitable for power electronics applications.
The working principle of FF600R06ME3BOSA1 is based on the IGBT technology. It consists of an insulated metal plate with two terminals, also known as the gate and drain. The gate terminal controls the flow of current between the drain and the source terminals. When the gate voltage is applied to the gate terminal, the current flow through the drain and the source terminals is increased. This enables the transistor to provide high current gains and high switching speeds.
In order to maximize its operating efficiency, it is important to properly set the necessary parameters. The operating temperature needs to be in line with the temperature range of the device, and the maximum safe voltage and current levels should be set. Additionally, the necessary gate voltage should be kept between 0.5v and 6v in order to properly control the switching action.
The FF600R06ME3BOSA1 is a highly reliable module. Its design ensures that the gate and drain are well insulated from each other, providing a high level of protection against electric shock. Additionally, the integrated gate driver provides a high level of immunity against overcurrent, overvoltage and over temperature conditions.
Finally, it has a high common-mode voltage, which allows it to work even in high-voltage circuits. This makes the FF600R06ME3BOSA1 a great choice for power supply applications, as it can deliver a high level of power without suffering any loss.
In conclusion, the FF600R06ME3BOSA1 is a powerful module that can be used in a wide range of applications. Its IGBT technology, high input impedance and integrated gate driver make it an ideal choice for high-power switching and amplifier applications. Additionally, it has a high common-mode voltage which allows it to be used in high-voltage circuits. With these features, the FF600R06ME3BOSA1 is a reliable and versatile module for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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