FF600R06ME3BOSA1 Allicdata Electronics
Allicdata Part #:

FF600R06ME3BOSA1-ND

Manufacturer Part#:

FF600R06ME3BOSA1

Price: $ 107.82
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 600A
More Detail: IGBT Module Trench Field Stop 2 Independent 600V 7...
DataSheet: FF600R06ME3BOSA1 datasheetFF600R06ME3BOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 98.01400
Stock 1000Can Ship Immediately
$ 107.82
Specifications
Series: --
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 700A
Power - Max: 1650W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 39nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FF600R06ME3BOSA1 Application Field and Working Principle

FF600R06ME3BOSA1 is a member of International Rectifier’s IGBT family. It is a four-terminal, insulated-gate bipolar transistor (IGBT) module in an insulated metal plate with an integrated gate driver, based on the latest chip technology. This transistor belongs to the family of modular devices and has a wide application field.

The FF600R06ME3BOSA1 can be used for a variety of applications. Its high input impedance and high-speed switching speed make it suitable for high-power switching and amplifier applications. It can also be used for motor control in industrial automation, microwave applications, and domestic appliances. In general, it can be used in any application where a transistor is required. It is also suitable for power electronics applications.

The working principle of FF600R06ME3BOSA1 is based on the IGBT technology. It consists of an insulated metal plate with two terminals, also known as the gate and drain. The gate terminal controls the flow of current between the drain and the source terminals. When the gate voltage is applied to the gate terminal, the current flow through the drain and the source terminals is increased. This enables the transistor to provide high current gains and high switching speeds.

In order to maximize its operating efficiency, it is important to properly set the necessary parameters. The operating temperature needs to be in line with the temperature range of the device, and the maximum safe voltage and current levels should be set. Additionally, the necessary gate voltage should be kept between 0.5v and 6v in order to properly control the switching action.

The FF600R06ME3BOSA1 is a highly reliable module. Its design ensures that the gate and drain are well insulated from each other, providing a high level of protection against electric shock. Additionally, the integrated gate driver provides a high level of immunity against overcurrent, overvoltage and over temperature conditions.

Finally, it has a high common-mode voltage, which allows it to work even in high-voltage circuits. This makes the FF600R06ME3BOSA1 a great choice for power supply applications, as it can deliver a high level of power without suffering any loss.

In conclusion, the FF600R06ME3BOSA1 is a powerful module that can be used in a wide range of applications. Its IGBT technology, high input impedance and integrated gate driver make it an ideal choice for high-power switching and amplifier applications. Additionally, it has a high common-mode voltage which allows it to be used in high-voltage circuits. With these features, the FF600R06ME3BOSA1 is a reliable and versatile module for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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