FF600R12ME4CB11BOSA1 Allicdata Electronics
Allicdata Part #:

FF600R12ME4CB11BOSA1-ND

Manufacturer Part#:

FF600R12ME4CB11BOSA1

Price: $ 170.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 600A
More Detail: IGBT Module Trench Field Stop 2 Independent 1200V ...
DataSheet: FF600R12ME4CB11BOSA1 datasheetFF600R12ME4CB11BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 154.61300
Stock 1000Can Ship Immediately
$ 170.07
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 1060A
Power - Max: 4050W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 37nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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Introduction

FF600R12ME4CB11BOSA1 is a power electronic component designed and manufactured by the German firm Siemens. It is an IGBT module that serves as a high voltage switch in applications such as variable speed drives and motor control. This component is specifically designed to use as a part of an inverter circuit in applications requiring control over high power devices and components. The component is also suitable for use in common applications that require high voltage isolation and protection. In this article, we look at the application field and working principle of FF600R12ME4CB11BOSA1.

Application Field

The FF600R12ME4CB11BOSA1 is designed for use in applications requiring high-voltage isolations and protections. It is a suitable choice for variable speed drive applications, motor controls, or any application that requires control of high power devices and components. The component can be used in applications such as UPS systems, industrial automation, data centers, and medical equipment. The component is also suitable for use in rail vehicle applications that require high current and grounding to reduce vibration and electrical noise.

Working Principle

The FF600R12ME4CB11BOSA1 works by allowing a high power switch to be operated from a low power control source. The component is designed with an insulated-gate bipolar transistor (IGBT) that is capable of providing fast switching and high current operation. The component contains two IGBTs connected in series, with their sources connected together and their gates connected to two isolated power supplies. The two IGBTs are controlled by two external current sources, with one controlling the upper IGBT while the other controls the lower IGBT.The high current operation is possible because of the low voltage drop across the IGBTs junction. This allows the highest possible current to flow through the IGBTs, enabling the fast switching and high power operation. The module is also equipped with a snubber circuit to help reduce the sharp voltage transitions and electromagnetic interference (EMI) produced by the IGBTs switching action. The snubber circuit consists of a capacitor and a resistor in parallel across the IGBT junction.

Conclusion

The FF600R12ME4CB11BOSA1 is a high-performance power electronic component designed for use in applications requiring high-voltage isolation and protection. The component utilizes an IGBT to provide fast switching and high current operation, and is further equipped with a snubber circuit for reduce sharp voltage transitions and EMI production. The component is suitable for use in a range of applications such as variable speed drives, motor controls, UPS systems, industrial automation, data centers and medical equipment.

The specific data is subject to PDF, and the above content is for reference

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