FF600R17ME4BOSA1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1700V
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 600A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	48nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FF600R17ME4BOSA1 Application Field and Working Principle

Introduction

FF600R17ME4BOSA1 is an insulated-gate bipolar transistor (IGBT) module manufactured by Fairchild Semiconductor. It has a breakdown voltage rating of 600 V and an operating junction temperature of 175°C. It is mainly used for driving high-current, low-voltage loads such as induction motors, traction motors, pumps, and ventilation fans, as well as high power switching applications.

Application Field

The FF600R17ME4BOSA1 module is mainly used for driving high-current, low-voltage loads such as induction motors, traction motors, pumps, and ventilation fans, as well as high power switching applications. It is specifically designed for low-voltage motor drives, as it can handle currents up to 17 A (RMS) and peak currents up to 30 A.The FF600R17ME4BOSA1 can be used in various applications, such as:• appliances• power tools• industrial drives• induction motor speed control• traction motor control• wind turbine drives• solar applications• AC motor drives• air conditioners• pumps• ventilation fans

Working Principle

The FF600R17ME4BOSA1 is based on the insulated-gate bipolar transistor (IGBT) technology. IGBTs are semiconductor devices that combine the characteristics of both bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs).The IGBT is normally switched on by a small current applied to the gate terminal. This turns the transistor on and allows current to flow from the source terminal to the drain terminal. When the basic circuit of the IGBT is complete and current flows from the source to the drain, it is said to be in the on state.The IGBT can be switched off by cutting off the gate current. This shuts the transistor off, preventing the current from flowing from the source to the drain. When the basic circuit of the IGBT is open and no current can flow from the source to the drain, it is said to be in the off state.

Conclusion

The FF600R17ME4BOSA1 is an IGBT module used for driving high-current, low-voltage loads, as well as for high power switching applications. It is based on the IGBT technology, which combines the characteristics of both BJTs and MOSFETs. It can be turned on by a small current applied to the gate terminal and off by cutting off the gate current.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description