Allicdata Part #: | FF600R12KE3NOSA1-ND |
Manufacturer Part#: |
FF600R12KE3NOSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 600A |
More Detail: | IGBT Module |
DataSheet: | FF600R12KE3NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The FF600R12KE3NOSA1 is a high-performance insulated-gate bipolar transistor (IGBT) module, part of the "EasyPACK" family of devices manufactured by Infineon Technologies. This module offers incredible power density and excellent thermal characteristics, making it the preferred choice for applications requiring high current and fast switching operations. It is made up of three independent IGBTs and one low-loss diode housed in a ceramic DPAK packaging. The FF600R12KE3NOSA1 is designed for industrial applications such as motor drive, welding, and motor control, as well as non-consumer electronics applications like controllable filters, power supplies and class-D audio amplifiers.
The IGBT module has a low gate charge and fast body diode recovery time, making it suitable for switching up to 600A at 12KV. The module is designed to have a very low power dissipation, thus reducing the total power loss during switching. The device has an operating temperature range of -40° to 150°C.
The principle of operation behind the module is quite simple. It consists of three independent IGBTs and a low-loss diode housed in a ceramic DPAK packaging. The IGBTs act as switches, allowing current to flow when they receive a voltage. The diode acts as a protection mechanism and provides a path for the current to flow when the IGBTs are not active. The IGBTs are controlled through gate control signals, which control the voltage at their gates. When the IGBT gate voltage is high, the IGBT conducts, allowing current to flow through the module. When the gate voltage is low, the IGBT is cut off, preventing current from flowing.
The FF600R12KE3NOSA1 provides solutions for high power and high-speed switching applications. It has an incredibly high power density, excellent thermal characteristics and very low power dissipation. In addition, the device has a low gate charge and fast body diode recovery time, making it suitable for switching up to 600A at 12KV. The module is designed for industrial and non-consumer electronics applications such as motor drive, welding, motor control, controllable filters, power supplies and class-D audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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