Allicdata Part #: | FF600R17KE3NOSA1-ND |
Manufacturer Part#: |
FF600R17KE3NOSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1700V 600A |
More Detail: | IGBT Module |
DataSheet: | FF600R17KE3NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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.Introduction
FF600R17KE3NOSA1 is a type of insulated-gate bipolar transistor (IGBT). It is a power electronic semiconductor device that combines the advantages of both bipolar transistors and field-effect transistors (FETs). It is suitable for full bridge, phase leg and three-phase IGBT applications. The FF600R17KE3NOSA1 is a reliable, cost efficient and easy to use component for power electronics applications.
Application Field
FF600R17KE3NOSA1 is a robust, reliable and cost efficient component designed for power electronics applications. It is typically used in motor control, power conversion, and power amplification circuits. It can be used in applications such as lighting control, uninterruptible power supplies, welding equipment, motor drives, solenoid control, and inductive heating.
Working Principle
IGBTs are combined devices that are made up of two different semiconductor devices, a bipolar junction transistor (BJT) and a MOSFET (metal-oxide-semiconductor field-effect transistor). It combines the high current handling capabilities of bipolar transistors with the low on-state voltage drop of field-effect transistors.
IGBTs have a metal gate that is controlled by a voltage. The gate voltage is the main controlling factor for device operation, including the turn-on, turn-off, and on-state voltage drop. The IGBT can be turned on by a positive gate voltage and turned off by a negative gate voltage. When the gate voltage is turned on, the N-channel MOSFET turns on, allowing current to pass from the collector to the emitter. The PNP bipolar transistor turns on to provide the base (collector) current needed to sustain the MOSFET.
The FF600R17KE3NOSA1 has a blocking voltage of 600V, which provides a maximum continuous on-state current of 17A. The IGBT can also achieve an on-state voltage drop of 2.8V at 25°C. This low voltage drop means that the FF600R17KE3NOSA1 can be used in battery-operated applications.
Conclusion
The FF600R17KE3NOSA1 is an IGBT module that can be used in power electronics applications such as motor control, power conversion, and power amplification circuits. Its high current handling capability, low on-state voltage drop, and 600V blocking voltage make it an ideal choice for any application that requires a reliable, cost effective solution.
The specific data is subject to PDF, and the above content is for reference
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