Allicdata Part #: | FF600R12KE4BOSA1-ND |
Manufacturer Part#: |
FF600R12KE4BOSA1 |
Price: | $ 133.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED PWR 62MM-1 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1200V 60... |
DataSheet: | FF600R12KE4BOSA1 Datasheet/PDF |
Quantity: | 10 |
1 +: | $ 121.47700 |
10 +: | $ 116.34600 |
Series: | C |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 600A |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 600A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 38nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF600R12KE4BOSA1 is an insulated gate bipolar transistor (IGBT) module manufactured by Mitsubishi Electric. IGBTs are a combination of field effect (in which a negative voltage applied to the gate terminal flips an electron from the conduction layer to the valence band) and bipolar (in which electrons are forced to move from the valence to the conduction layer by an electric field) transistors.
The FF600R12KE4BOSA1 is a fully-rated 600V/12A IGBT module with a low-inductance structure and excellent surge and dv/dt tolerance. It provides improved switching performance and low power losses in applications such as motor drives, renewable energy devices, VVVF and UPS systems, welding machines, power supplies and industrial heating systems.
The working principle of an IGBT module like the FF600R12KE4BOSA1 is simple. When a positive voltage is applied to the gate terminal, a current flows through the device, allowing it to \'switch on\'. When the voltage is reversed, the current is shut off and the module \'switches off\'. The faster the gate voltage is switched off, the faster the IGBT switches off and the less power is lost in the switching process.
The gate-emitter voltage (VGE) of the FF600R12KE4BOSA1 is 600V, with a collector current (IC) of 12A and an on-state voltage drop (VCE(on)) of 1.8V at 25°C and 12A IC. It also has an optimized turn-off rise time (trr) of 15ns and an ultra-low stray inductance of 0.8nH to ensure reliable switching times. The device is suitable for use in temperatures up to 125°C and has a safe operating area of 40A for 10µs with 8A peak.
The FF600R12KE4BOSA1 has a positive temperature coefficient (PTC) to protect the device during high temperature operation. Its EMC protection features, including electrostatic discharge (ESD) and surge performance, have also been improved to ensure reliable operation. The module is also equipped with 4 source pins, which can improve the current sharing between different parts of the device, providing more stable operating conditions.
In summary, the FF600R12KE4BOSA1 is a 600V/12A IGBT module with excellent surge and dv/dt tolerance and a low-inductance structure. It is designed for use in applications such as motor drives, renewable energy devices, VVVF and UPS systems, welding machines, power supplies and industrial heating systems. With its improved switching performance and EMC protection features, it is a reliable and cost-effective solution for these applications.
The specific data is subject to PDF, and the above content is for reference
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