Allicdata Part #: | FF600R12ME4B11BPSA1-ND |
Manufacturer Part#: |
FF600R12ME4B11BPSA1 |
Price: | $ 160.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 600A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | FF600R12ME4B11BPSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 145.82000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Power - Max: | 4050W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 600A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 37nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FF600R12ME4B11BPSA1 module is an IGBT Module that is a key component in several applicatoins. It features cutting-edge technology coupled with extreme power and high-voltage output. It is used in applications where high temperature and current capacity is required. This module is a good choice for applications where the need for large power and high-voltage interface is needed.
Application Field
The FF600R12ME4B11BPSA1 module is used in a variety of applications where high current and high-voltage requirements are needed. These include, but are not limited to:
- Power generation.
- Power transmission.
- Industrial applications.
- Power electronics.
- High-power motors.
- Electric Vehicles (EVs).
- Solar energy.
- Wind energy.
Principle of Working
The FF600R12ME4B11BPSA1 module is an IGBT module that utilises the IGBT principle for its operation. This principle involves the use of two transistors wherein an insulated gate is used to control current between the two transistors. It is this insulated gate that allows the transistor to switch from its conducting state to its non-conducting state. When the gate is opened, current flows between the two transistors - this is when the IGBT is in its conductive state.
When the insulated gate is closed, the IGBT is in its non-conductive state. The gate voltage is then used to control the state of the IGBT in either conducting or non-conducting mode. This allows the module to operate at a high current rating, allowing it to be used in a variety of applications.
Advantages
The IGBT principle allows the FF600R12ME4B11BPSA1 module to gain several advantages over other modules. The use of insulated gate technology enables the module to operate at high voltage, thereby allowing it to interface with different devices or systems. It also provides protection from short-circuits or overloads. The module is also highly efficient, offering high-power output with minimal energy losses.
The module also has the advantage of being able to maintain its stable performance over a long period of time. It does not need frequent re-calibration since the insulated gate ensures that the IGBT stays in its stable state over a long period of time. This makes the module ideal for use in applications where stable performance is required over an extended period of time.
Conclusion
The FF600R12ME4B11BPSA1 module is an IGBT module designed for applications that require high current and voltage requirements. It utilises the IGBT principle to provide high power output and high-voltage interface, as well as protection from short-circuits or overloads. The use of insulated gate technology also enables the module to maintain its stable performance over a long period of time, making it ideal for applications where stability is required over an extended period of time.
The specific data is subject to PDF, and the above content is for reference
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