Allicdata Part #: | FF600R12IP4BOSA1-ND |
Manufacturer Part#: |
FF600R12IP4BOSA1 |
Price: | $ 288.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 600A |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1200V 60... |
DataSheet: | FF600R12IP4BOSA1 Datasheet/PDF |
Quantity: | 2 |
1 +: | $ 262.70400 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 600A |
Power - Max: | 3350W |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 600A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 37nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF600R12IP4BOSA1 Application Field and Working Principle
FF600R12IP4BOSA1 is a type of insulated gate bipolar transistor (IGBT) module developed by Infineon Technologies that offers higher switching performance, improved reliability and lower on-state losses. It has a wide range of applications mainly in motor control, solar energy, lighting, aerospace and automotive control.
Application Field:
FF600R12IP4BOSA1 is designed for high frequency switching power applications, mainly in motor control and solar energy. The module has a maximum rating of 600 volts and a maximum current of 1200A.
The module is also suitable for applications such as lighting and aerospace, automotive and other industrial systems. It has been tested and proven to be compatible with low-voltage integrated micro controllers and application-specific circuits. It is also used in three-phase solar inverters, where its superior switching performance provides improved efficiency, reduced losses, and protection against short circuits.
Working Principle:
FF600R12IP4BOSA1 integrated gate bipolar transistor (IGBT) module works on a simple principle. When a voltage is applied to the module’s gate terminal, it creates a conducting path between the emitter and collector, enabling current to flow through the module. This conduction path is created when electrical charges are injected into a P-type semiconductor substrate layer. When the voltage is turned off, the conduction path is also broken, effectively reversing the flow of electrons.
Due to its semi-conductive nature, the IGBT module can be self-protected from overvoltage, overcurrent and over temperature conditions. Furthermore, this module can be connected with a digital signal processor (DSP), which makes it suitable for smart motor control applications. It further offers the advantages of low switching losses, fast switching and low EMI.
In conclusion, FF600R12IP4BOSA1 is a IGBT module developed for high frequency switching power applications such as motor control and solar energy. It offers superior performance, improved reliability and low losses, making it ideal for a wide range of applications. Its working principle is based on the flow of electrons through a semi-conductive path created by electrical charges injection. It is protected from overvoltage, overcurrent and over temperature conditions, and can be further connected to a digital signal processor.
The specific data is subject to PDF, and the above content is for reference
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