FF600R07ME4B11BOSA1 Allicdata Electronics
Allicdata Part #:

FF600R07ME4B11BOSA1-ND

Manufacturer Part#:

FF600R07ME4B11BOSA1

Price: $ 111.59
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 600A
More Detail: IGBT Module Trench Field Stop 2 Independent 650V 7...
DataSheet: FF600R07ME4B11BOSA1 datasheetFF600R07ME4B11BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 101.43900
Stock 1000Can Ship Immediately
$ 111.59
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 700A
Power - Max: 1800W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 37nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FF600R07ME4B11BOSA1 Application Field and Working Principle

FF600R07ME4B11BOSA1 IGBT (Insulated Gate Bipolar Transistor) modules are a type of electronic component that is used to build electronic circuits. They are commonly found in consumer electronics, high-power applications, automation, and in industrial environments. They are suitable for medium frequency applications, such as switching power supplies, and for driving loads with high frequency pulses.

The FF600R07ME4B11BOSA1 IGBT is a three-terminal, insulated gate type of transistor. It is a device that can control both current (amperage) and voltage. The three terminals are the collector (C), emitter (E) and gate (G). The device works by allowing electrical current to flow between the collector and emitter terminals when the voltage at the gate terminal is sufficient. In comparison to a regular transistor, IGBTs have higher switching speeds, low on-state voltage losses and are able to handle higher voltages.

IGBTs can be used in a wide range of applications. In motor control systems, they can be used to control the speed of the motor. They are also used in power supply circuits, in inverters and converters, and in switching loads with high frequencies. They are also used in high power applications, such as welding and induction heating, where the power requirements are very high.

The working principle of the FF600R07ME4B11BOSA1 IGBT is relatively simple. The gate terminal is used to control the current flowing between the collector and emitter terminals. When a positive voltage is applied to the gate terminal, a current is drawn from the collector to the emitter. This current will be proportional to the voltage at the gate. When the voltage at the gate is removed, the current will cease to flow and the device will become off.

The FF600R07ME4B11BOSA1 IGBT is a robust and reliable device. It has a high switching frequency and low on-state voltage losses. It is capable of handling high voltages and currents, making it suitable for a wide range of applications. It is an ideal device for motor control and other high power applications.

The specific data is subject to PDF, and the above content is for reference

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