FM25L04B-GA Allicdata Electronics
Allicdata Part #:

428-3210-ND

Manufacturer Part#:

FM25L04B-GA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 4K SPI 10MHZ 8SOIC
More Detail: FRAM (Ferroelectric RAM) Memory IC 4Kb (512 x 8) S...
DataSheet: FM25L04B-GA datasheetFM25L04B-GA Datasheet/PDF
Quantity: 1
Stock 1Can Ship Immediately
Specifications
Series: Automotive, AEC-Q100, F-RAM™
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Kb (512 x 8)
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: FM25L04
Description

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  • Introduction
FM25L04B-GA is a 4-pin, 34Mbit Flash memory device. It is a non-volatile-memory (NVM) technology with a wide range of applications in embedded systems and consumer electronics. This article explores the applications and working principle of the FM25L04B-GA Flash memory, and also discusses some of its advantages and disadvantages.
  • Application
The FM25L04B-GA Flash memory has a variety of uses. Its high memory capacity and easy programming make it ideal for data storage applications. Examples of this include storing image files and sound recordings. It can also be used in medical and industrial equipment, as well as for applications requiring a reliable file system.Additionally, the FM25L04B-GA Flash memory is suitable for use in portable devices, such as mobile phones, digital cameras, and so on. It is also great for applications requiring frequent and fast industrial data logging, such as medical instrumentation and large-scale plant monitoring. It is often used in programs that require low power consumption and are running continuously, such as military and aerospace applications.
  • Working Principle
The working principle of the FM25L04B-GA Flash memory is based on the semiconductor technology, which involves the use of a small number of electrons as the memory elements. The memory cells are divided into two basic groups - the charge trapping flash memory (CTFM) cells and the floating-gate transistor memories (FGM).When a voltage is applied to a CTFM cell, certain electrons are trapped in the floating gate and become the memory elements. When the voltage is removed, the cells retain their charge and can store binary information. This is known as non-volatile memory (NVM) technology.The FGM cells are composed of a floating gate transistor, which is made up of a positively charged gate, a transistor, and a substrate. When there is a voltage difference between the gate and the substrate, the electrons that flows through the gate induce a charge onto the floating gate. This makes the transistor either a "1" or a "0," depending on the position of the gate. This technology is known as EPROM and is used in flash memory applications.
  • Advantages
The FM25L04B-GA Flash memory has many advantages over conventional memory technologies. First, it has a wide range of applications due to its high memory capacity and easy programming. Second, it is non-volatile memory, which means that it can store information even if the power is turned off. Third, it is highly reliable and is resistant to environmental and electrical disturbances.The device also offers low power consumption and is suitable for most embedded applications due to its wide operating temperature range. Furthermore, it is easily reprogrammable and supports multiple write cycles, making it an ideal choice for many applications.
  • Disadvantages
Despite its many advantages, the FM25L04B-GA Flash memory does have some drawbacks. First, its high capacity also means that it is difficult to read and write, and data can be erased inadvertently if proper precautions are not taken. Second, it is expensive to manufacture and requires more complex circuitry than other memory types.In addition, the device has limited endurance and can wear out after a certain number of write cycles, reducing its reliability over time. Finally, there is a risk that data stored in the device may be corrupted due to electrical or environmental interference.
  • Conclusion
To conclude, the FM25L04B-GA Flash memory is a versatile and reliable memory technology with a variety of applications. Its high capacity and ease of programming make it suitable for applications ranging from consumer electronics to military equipment. Despite having some limitations, its advantages far outweigh its disadvantages. For this reason, it is an excellent choice for many embedded applications.

The specific data is subject to PDF, and the above content is for reference

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