FM25V01A-G

The FM25V01A-G is a non-volatile static random access memory (SRAM) integrated circuit (IC) made by Fujitsu Semiconductor, using the 1.8V Advanced Low Power Sparse Memory (ALPSM) process. This IC is typically used in applications requiring fast and reliable data storage, such as mobile or embedded systems, with its guaranteed data retention upon power down and its fast read access time.

The combination of low power consumption, low voltage, high-speed read access, and none data retention characteristics make the FM25V01A-G a popular choice for these types of applications. As a non-volatile memory, it does not require any battery backup in order to retain its data, greatly reducing the cost and size of applications. The 1.8V advanced low power sparse memory process also makes this device suitable for applications with power constraints, such as portable medical devices.

The FM25V01A-G is a serial memory device, meaning it has no external address lines or data bus. All of the memory cells are individually addressed using an Oxide-nitride-oxide (ONO) charge trapping technology. This technology allows the memory cells to store bits as electrons that flow between two floating gates, trapping the charge when a programming voltage is applied to one of the gates. To ensure data retention, the charge is isolated from the external environment, even when the device is powered down.

The FM25V01A-G has a fast read access time of 10ns, making it suitable for applications with fast data rate requirements. The IC has a serial interface communication that can be configured for either Serial Peripheral Interface (SPI) or I2C communication. Additionally, a data retention voltage of 1.35V is set in order to save power when the device is in its idle state. The IC also features on-chip resistance to electro-static discharge (ESD), each memory cell having an ESD protection of 2000V.

The FM25V01A-G integrates the following features which make it an excellent choice for applications requiring fast, reliable data storage: low power consumption, fast read access (10ns), data retention voltage of 1.35V, serial interface (SPI/I2C), Oxide nitride oxide (ONO) charge trapping technology, electrostatic discharge protection of 2000V, wide temperature range (–40 to +85°C), and small footprint (2.9 x 3.2 mm).

In summary, the FM25V01A-G non-volatile memory is an excellent choice for applications requiring fast, reliable data storage with low power consumption and low voltage. Its guaranteed data retention upon power down, fast read access time, and the physical size makes it applicable for many applications, such as medical devices and embedded systems.