FM25VN10-GTR

Series:	F-RAM™
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FRAM
Technology:	FRAM (Ferroelectric RAM)
Memory Size:	1Mb (128K x 8)
Clock Frequency:	40MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	SPI
Voltage - Supply:	2 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	FM25VN10

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FM25VN10-GTR Memory: Application Field and Working PrincipleThe FM25VN10-GTR is a type of Nonvolatile Memory (NVM) that can offer fast read speeds and large data storage capabilities. It is an essential part of any embedded system and is used in various applications, such as consumer electronics, smart home, automobiles, and industrial automation. It is also an ideal choice for designers looking to improve performance and create products with smaller form factors. In this article, we will discuss the application field and working principle of the FM25VN10-GTR.The FM25VN10-GTR is a state-of-the-art NVM. It features an advanced serial peripheral interface (SPI) that can be used to control the device from the host or from a remote microcontroller. This SPI interface allows for simultaneous operation and commands, which can significantly reduce system overhead and costs. Additionally, the FM25VN10-GTR can provide fast read speed, with a cycle time of 7 ns, and has a wide operating temperature range from -40°C to +85°C and an operating voltage range from 2.7V to 3.6V.The FM25VN10-GTR is suitable for use in applications that require both reliable data storage and fast data read and write operations. It can be used in a variety of scenarios, such as gaming systems, digital audio players, and medical imaging systems. It is also well-suited for the development of autonomous robots and drones. With its advanced features and flexible design, the FM25VN10-GTR is an excellent choice for a variety of applications.The working principle of the FM25VN10-GTR is based on Ferroelectric Random Access Memory (FRAM). FRAM is a type of non-volatile random access memory that is based on the “floating-gate” principle. The floating-gate is a layer of oxide that acts as a capacitor and provides electrical insulation between two conducting layers. The device is connected to an external voltage source, which causes current to pass through the oxide, creating an electric field that can interact with the floating-gate.When a write command is sent to the device, an electric field is created between the floating-gate and the substrate. This electric field causes the floating-gate to act as a charge storage, which stores the bit in the memory cell. When the write command is completed, the electric field disappears, and the charge stored in the floating-gate is retained until subsequently modified.When a read command is sent to the device, the current passing through the oxide layer interacts with the charge stored in the floating-gate, generating an electric field that can be detected by the external voltage source. This detection allows the device to determine the stored bit without any additional external wiring or circuitry.In conclusion, the FM25VN10-GTR is an advanced and reliable non-volatile memory, which is suitable for a variety of applications. It is based on Ferroelectric Random Access Memory (FRAM) technology, which enables fast read and write operations and ensures reliable data storage and retrieval. The device is also small in size, allowing it to be incorporated into products with small form factors. With its advanced features and versatile design, the FM25VN10-GTR is an ideal solution for designers looking to improve their embedded system\'s performance.

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