Allicdata Part #: | 428-4491-ND |
Manufacturer Part#: |
FM25V02A-DGQ |
Price: | $ 4.87 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FRAM 256K SPI 40MHZ 8DFN |
More Detail: | FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8)... |
DataSheet: | FM25V02A-DGQ Datasheet/PDF |
Quantity: | 309 |
1 +: | $ 4.42260 |
10 +: | $ 4.06980 |
25 +: | $ 3.98513 |
50 +: | $ 3.97102 |
162 +: | $ 3.56242 |
324 +: | $ 3.45438 |
648 +: | $ 3.28530 |
1134 +: | $ 3.17024 |
Series: | F-RAM™ |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FRAM |
Technology: | FRAM (Ferroelectric RAM) |
Memory Size: | 256Kb (32K x 8) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 2 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN Exposed Pad |
Supplier Device Package: | 8-DFN (4.5x4) |
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The FM25V02A-DGQ is a non-volatile memory device, more specifically a serial, two-wire, 16-kbit ferroelectric (F-RAM) random access memory (RAM). It belongs to the family of ferroelectric RAM (FRAM) memory products that are based on the market leading non-volatile FRAM technology from Fujitsu. This memory device has an extremely wide temperature operating range, enabling data storage in even the harshest environments.
Application Field of FM25V02A-DGQThe FM25V02A-DGQ is intended to be used in harsh industrial environments. Applications include industrial automation, measurement and control, safety devices or automotive. Its wide temperature capabilities enable safe and reliable data storage in devices that have to function in extreme temperatures. It is also commonly used in medical devices, mostly because its low power consumption enables a longer battery life for devices such as portable ventilators, wheelchair and patient connect.
The FM25V02A-DGQ’s low-power characteristics are also desirable in consumer goods, such as wrist-wearable devices and other smart objects used to monitor health and fitness. Its non-volatility also allows frequent writing and erasing of data without an extra back-up battery.
Working Principle of FM25V02A-DGQThe FM25V02A-DGQ is a two-wire serial F-RAM memory device that utilizes the latest ferroelectric non-volatile technology. It has a 16-kbit capacity and can be used in harsh industrial environments due its wide temperature operation range. It can also be used in consumer device applications due to its low power consumption characteristics.
The device utilizes a ferroelectric layer that is charged and polarised so that data can be read or written without the need for a back-up power source. Writing a data “1” or “0” is accomplished by polarising the ferroelectric layer to the appropriate direction. The data will be stored for up to 10^14 times without voltage loss, due to the properties of the ferroelectric layer.
The device is accessed with a two-wire serial interface, which only supports a single master and has no multi-slave capability. This interface supports both synchronous and asynchronous read/write operations. Synchronous mode uses a supply voltage of either 4.0V or 6.0V while asynchronous mode only supports 6.0V. The supply voltage in either mode must remain between 4.0V to 5.5V to ensure data retention.
ConclusionThe FM25V02A-DGQ is a low-power, non-volatile 16-kbit FRAM memory device that can be used in both consumer and industrial applications due to its wide temperature operation range and low power consumption. It utilizes ferroelectric technology for data storage and retrieval, requiring no back-up power source. It is accessed using a two-wire serial interface which can be synchronous or asynchronous.
The specific data is subject to PDF, and the above content is for reference
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