FM25C160B-GATR

Series:	F-RAM™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FRAM
Technology:	FRAM (Ferroelectric RAM)
Memory Size:	16Kb (2K x 8)
Clock Frequency:	15MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	SPI
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	FM25C160

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Introduction of FM25C160B-GATR

FM25C160B-GATR, a non-volatile memory, is a one-time programmable (OTP) memory chip designed for applications for digital voice recorders and microcontroller memory. It has low power, high-speed and low-voltage operation modes, making it a very suitable and suitable choice for digital media applications. It is produced by ISSI (Integrated Silicon Solution Inc.).

Application Field of FM25C160B-GATR

FM25C160B-GATR is a long-term nonvolatile memory that is ideal for use in digital media applications. It can also be used to store data such as miscellaneous information, image/video data, medical images or patient data in medical systems, audio/video data files in mobile phones and digital cameras, voice files in voice recorders, and device settings in home automation equipment. Moreover, with the low power consumption and high speed operation, it is designed to be used in wearable devices, which demand the mixture of low power and high speed operations in memory applications. It is also perfect for other application fields, such as industrial control systems, smart cards and so on.

Features of FM25C160B-GATR

FM25C160B-GATR has a wide range of features that make it suitable for use in digital media applications, such as high data retention, low power consumption, high speed operation, low voltage operation and more.The memory has an endurance of 1 million writers and a data retention of 10 years. It is operate with 2.7V to 5.5V and its speed is up to 80MHz which allows it to perform faster write cycles to store data quickly. Its low power consumption is up to 4.5mA guarantying its usage in power-mode applications. Also, its various features include the “Wake On Write” which accelerates the write cycle when the write is done often.

Working Principle of FM25C160B-GATR

FM25C160B-GATR adopts the Dynamic Op-Code Method (DOCM), which enables it to realize the fast erase/ write and read speed. As with other one-time programmable (OTP) memories, FM25C160B-GATR stores data using electrical or optical programming techniques.The memory stores data using physical cell which consists of the topography of its semiconductor components, the entire chip can be programmed and reprogrammed using the DOCM. It is programmed using a predetermined number of write cycles and then locked so that it can not be rewritten without destroying the data stored in it.The write process is initiated by a write command followed by write words, which contain address and data to be programmed. The DOCM then determines the sequence of operation for each memory cycle. It cycles through the selected memory array, earning the data and then writing it to the selected address.In short, FM25C160B-GATR is a non-volatile memory chip designed for digital media applications and other applications, with low power, high speed, low voltage operation and other features making it a suitable choice for various memory applications. It is suitable for storing data in digital media applications, home automation equipment, smart cards and much more.

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