FM25C160B-G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FM25C160B-G

The FM25C160B-G is a FRAM (Ferroelectric Random Access Memory) designed for use in memory intensive systems. It is made from an ultra-high density Multi-Layer Chip (MLCC) to provide a very small form factor. It has an industry-standard interface which makes it easy to integrate into existing systems.

The FM25C160B-G has many features that make it suitable for use in a wide range of applications, including automotive, industrial and medical. These features include a fast write speed, low power consumption and robust data storage. It also has an extended temperature range and many security features, such a software write protection, tamper detection and more.

Application Field

The FM25C160B-G is suitable for use in memory intensive applications, such as on-board, in-vehicle and industrial systems. It is ideal for applications which require a very small form factor, low power consumption and fast write speed. It is also suitable for medical applications as it offers robust security and holds data reliably under extended temperature ranges.

The FM25C160B-G is suited to applications that require a FRAM such as those that require reliable data storage for settings, parameters and configuration purposes. They are often used in automotive, medical and industrial systems for storing settings, parameters and configuration data.

Working Principle

The FM25C160B-G works on the principle of ferroelectricity. A ferroelectric material is capable of storing a voltage as a result of an electrical field applied to it. This field is created when a charged particle (electron or proton) is trapped in a space between the material’s atoms. When the electrical field is applied to the charged particles, they become polarized, creating a charge within the material. This polarization is stored until the electrical field is removed.

In the FM25C160B-G, this polarization is used to store data. When the field is applied to the FM25C160B-G, the electrons are trapped and polarized. The charge on the electrons is used to represent binary data. By changing the applied voltage, different levels of polarization are created, allowing larger amounts of data to be stored. This data can then be read back from the FM25C160B-G by reversing the applied voltage.

As with other forms of memory such as DRAM (Dynamic Random Access Memory) or SRAM (Static Random Access Memory), the FM25C160B-G is a non-volatile form of memory, meaning that the stored data is retained even when power is removed. In addition to this, the FM25C160B-G also has many features that make it suitable for applications requiring higher security, such as tamper detection, software write protection and reduced power consumption.

Conclusion

The FM25C160B-G is a small form factor, low power ferroelectric RAM designed for memory intensive systems. It is suitable for use in many applications, including automotive, industrial and medical, and has several features which make it suitable for use in environments requiring high security and reliable data storage. It works on the principle of ferroelectricity, allowing data to be stored very densely, and retained even when power is removed.

The specific data is subject to PDF, and the above content is for reference