Allicdata Part #: | FMMT449TR-ND |
Manufacturer Part#: |
FMMT449TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 30V 1A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 1A 150MHz 500mW S... |
DataSheet: | FMMT449TA Datasheet/PDF |
Quantity: | 9000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 2V |
Power - Max: | 500mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | FMMT449 |
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FMMT449TA is a commonly used Bipolar Junction Transistor (BJT). It is a single transistor available in a variety of different packages, including the TO-92 package. It is used in many applications and can be used to control switching, current amplification, and signal conditioning circuits.
FMMT449TA has a three charge carrier design with a single emitter, a single base and a single collector. The transistor consists of three active elements; emitter, collector, and base. The emitter is the electrode that injects electrons into the base region. The collector is the electrode that receives electrons from the base region. The base is the junction between the emitter and collector and acts as a control element. When a current flows through the base, the current flow between the collector and the emitter is amplified. FMMT449TA is an NPN type of transistor.
The applications for FMMT449TA are myriad. One of the most common applications for FMMT449TA is switching. It can be used to control the switching of loads and other devices. It can also be used for current amplification. By controlling the amount of current entering the base of the transistor, the current from the collector to the emitter can be increased, resulting in a higher output current. Additionally, FMMT449TA can be used in signal conditioning circuits. This can include noise suppression, filtering and level shifting applications.
The working principle of FMMT449TA is based on charge carriers. When a voltage is applied to the emitter, electrons are injected into the base region. This creates a current flow between the emitter and the collector. As the current flow increases, the base-collector junction becomes more forward biased, resulting in a larger current flow. This current flow can be varied by changing the voltage applied to the base. By carefully controlling this voltage, the collector-emitter current can be increased or decreased accordingly.
In short, FMMT449TA is a single NPN bipolar junction transistor that is used for many applications, such as switching, current amplification, and signal conditioning. It is based on the principle of charge carriers and the current flow between the collector and the emitter can be increased or decreased by adjusting the base voltage. FMMT449TA is a cost effective, reliable and versatile solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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