FMMT458QTA Discrete Semiconductor Products |
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Allicdata Part #: | FMMT458QTADITR-ND |
Manufacturer Part#: |
FMMT458QTA |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 400V 0.225A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 225mA 50MHz 500m... |
DataSheet: | FMMT458QTA Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.12138 |
6000 +: | $ 0.11355 |
15000 +: | $ 0.10572 |
30000 +: | $ 0.10023 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 225mA |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 6mA, 50mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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The FMMT458QTA is a NPN Bipolar Transistor (BJT). It is a commonly used semiconductor device and is a single-type transistor. It is typically used for general purpose amplification and switching applications.
The main feature of FMMT458QTA is its low collector-emitter saturation voltage, meaning that it can be used to drive high-current loads with excellent efficiency. It is also relatively tolerant to fluctuations in collector-emitter voltage, making it suitable for use in power supplies and other applications where the input voltage may vary over time.
The FMMT458QTA has an estimated power dissipation rating of 500 mW, and its maximum collector-emitter voltage rating is 40V. The maximum collector-emitter current rating is 500mA, and the maximum collector-base voltage rating is 40V. The maximum emitter-base voltage rating is 5V.
The FMMT458QTA uses a NPN bipolar configuration. This means that it has two p-type (negative) and one n-type (positive) semiconductor layers. As such, it has three terminals. The emitter (E) terminal is connected to the negative voltage source and the collector (C) terminal is connected to the positive voltage source. The base (B) terminal is connected to the control signal.
When the FMMT458QTA is used as an amplifier, the base terminal is connected to the input signal and the collector terminal is connected to the output signal, providing gain to the input signal. As the base and collector terminals are biased with a DC voltage, the transistor is said to be biased in its active mode. In this mode, the transistor amplifies the input signal by a factor that depends on its DC bias current.
When the FMMT458QTA is used as a switch, the connection between the collector and emitter terminals is switched on and off. The switching action is controlled by changing the amount of current that flows through the base terminal. When the base current is low, the transistor is said to be in its cut-off mode and acts as an open switch. When the base current is high, the transistor is in its saturation mode and acts as a closed switch. Since the switching action of the FMMT458QTA can be easily controlled by the base current, it is often used for signal processing, logic gates, and timing circuits.
In summary, the FMMT458QTA is a single NPN Bipolar Transistor (BJT). It is used in applications such as general purpose amplification and switching. Its low collector-emitter saturation voltage, as well as its ability to tolerate fluctuations in collector-emitter voltage, make it suitable for use in power supplies and other applications. Its maximum collector current rating is 500mA, with a maximum collector-emitter voltage rating of 40V and a maximum emitter-base voltage rating of 5V. Additionally, its switching action can be easily controlled by changing the base current.
The specific data is subject to PDF, and the above content is for reference
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