FMMT458QTA Allicdata Electronics

FMMT458QTA Discrete Semiconductor Products

Allicdata Part #:

FMMT458QTADITR-ND

Manufacturer Part#:

FMMT458QTA

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 400V 0.225A SOT23
More Detail: Bipolar (BJT) Transistor NPN 400V 225mA 50MHz 500m...
DataSheet: FMMT458QTA datasheetFMMT458QTA Datasheet/PDF
Quantity: 1000
3000 +: $ 0.12138
6000 +: $ 0.11355
15000 +: $ 0.10572
30000 +: $ 0.10023
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 225mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 500mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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The FMMT458QTA is a NPN Bipolar Transistor (BJT). It is a commonly used semiconductor device and is a single-type transistor. It is typically used for general purpose amplification and switching applications.

The main feature of FMMT458QTA is its low collector-emitter saturation voltage, meaning that it can be used to drive high-current loads with excellent efficiency. It is also relatively tolerant to fluctuations in collector-emitter voltage, making it suitable for use in power supplies and other applications where the input voltage may vary over time.

The FMMT458QTA has an estimated power dissipation rating of 500 mW, and its maximum collector-emitter voltage rating is 40V. The maximum collector-emitter current rating is 500mA, and the maximum collector-base voltage rating is 40V. The maximum emitter-base voltage rating is 5V.

The FMMT458QTA uses a NPN bipolar configuration. This means that it has two p-type (negative) and one n-type (positive) semiconductor layers. As such, it has three terminals. The emitter (E) terminal is connected to the negative voltage source and the collector (C) terminal is connected to the positive voltage source. The base (B) terminal is connected to the control signal.

When the FMMT458QTA is used as an amplifier, the base terminal is connected to the input signal and the collector terminal is connected to the output signal, providing gain to the input signal. As the base and collector terminals are biased with a DC voltage, the transistor is said to be biased in its active mode. In this mode, the transistor amplifies the input signal by a factor that depends on its DC bias current.

When the FMMT458QTA is used as a switch, the connection between the collector and emitter terminals is switched on and off. The switching action is controlled by changing the amount of current that flows through the base terminal. When the base current is low, the transistor is said to be in its cut-off mode and acts as an open switch. When the base current is high, the transistor is in its saturation mode and acts as a closed switch. Since the switching action of the FMMT458QTA can be easily controlled by the base current, it is often used for signal processing, logic gates, and timing circuits.

In summary, the FMMT458QTA is a single NPN Bipolar Transistor (BJT). It is used in applications such as general purpose amplification and switching. Its low collector-emitter saturation voltage, as well as its ability to tolerate fluctuations in collector-emitter voltage, make it suitable for use in power supplies and other applications. Its maximum collector current rating is 500mA, with a maximum collector-emitter voltage rating of 40V and a maximum emitter-base voltage rating of 5V. Additionally, its switching action can be easily controlled by changing the base current.

The specific data is subject to PDF, and the above content is for reference

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