FMMT555TA Allicdata Electronics
Allicdata Part #:

FMMT555TATR-ND

Manufacturer Part#:

FMMT555TA

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 150V 1A SOT23-3
More Detail: Bipolar (BJT) Transistor PNP 150V 1A 100MHz 500mW ...
DataSheet: FMMT555TA datasheetFMMT555TA Datasheet/PDF
Quantity: 24000
1 +: $ 0.06400
10 +: $ 0.06208
100 +: $ 0.06080
1000 +: $ 0.05952
10000 +: $ 0.05760
Stock 24000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
Power - Max: 500mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: FMMT555
Description

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The FMMT555TA is a Single Bipolar Junction Transistor (BJT) with a wide range of applications. This device is ideal for general purpose switching and amplifying applications. The FMMT555TA features an integrated Darlington circuit, with low collector saturation voltage, low on-resistance, and superior switching performance.

The FMMT555TA employs an NPN structure which is composed of a base, collector and emitter. The emitter is the negative terminal (-) and transmits electrons in the circuit. The collector is the positive terminal (+) and collects the electrons from the emitter. The base controls the current flow by adjusting the voltage between the collector and the emitter with base-to-emitter junction. When a base current is applied, the transistor amplifies this current, allowing a much greater current from the collector to the emitter. This is known as a voltage-controlled device and makes it ideal for amplifying applications.

The FMMT555TA is a switching transistor and is used in applications such as audio amplifying and low-frequency power switching applications. It may be used as an electronic switch, which attempts to make a connection between two terminals without the need for a mechanical switch. This feature allows for microsecond switching response times, providing superior protection against switching spikes and over-temperature conditions. Furthermore, the FMMT555TA provides superior frequency response and power ratings, making it ideal for high-power switching applications.

The FMMT555TA also features high peak power capability. In switching applications, this feature allows for low switching losses, lowered component costs and improved product lifecycle. In audio amplifying applications, this feature allows for greater power amplification with little or no distortion. The device also has high-current gain and a wide range of operating voltages, which makes it ideal for use in analog circuits.

The FMMT555TA is a reliable device and has very low leakage currents. This makes it suitable for use in areas with constrained power budgets, such as battery-powered applications. In addition, the FMMT555TA has a low ON-state loss and high switching frequency for improving system efficiency. As a result, it is suitable for use in switching power supplies.

In conclusion, the FMMT555TA is a versatile device with a wide range of applications. Its low collector saturation voltage, low on-resistance, and superior switching performance make it suitable for general purpose switching and amplifying applications. Its high peak power and wide range of operating voltages make it ideal for use in audio amplifying and low-frequency power switching applications. Finally, the device\'s low leakage current and high switching frequency are suitable for use in battery-powered and switching power supply applications.

The specific data is subject to PDF, and the above content is for reference

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