FMMT413TA Allicdata Electronics
Allicdata Part #:

FMMT413TR-ND

Manufacturer Part#:

FMMT413TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 50V 0.1A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN - Avalanche Mode 50V ...
DataSheet: FMMT413TA datasheetFMMT413TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Avalanche Mode
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 330mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: FMMT413
Description

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The FMMT413TA is a Bipolar Junction Transistor (BJT) designed for a variety of switching and amplifier circuits. It is a single-stage BJT that has the added benefit of being relatively easy to use. It features a low noise, high gain and moderately fast switching speed. This makes it a great option for many applications that require a reliable yet affordable BJT.

When using the FMMT413TA, it is important to consider the current gain or current amplification that it can provide. The current gain of this device is typically around 100 (when using high current drain conditions) and the current gain can vary depending on the manufacturer. To ensure that the device can provide the desired current gain, it is important to ensure that the circuit is designed to provide optimal conditions.

The FMMT413TA is also capable of handling a variety of temperatures. It is typically rated for operation up to 125C, and can even handle temperatures up to 175C for short periods. As such, it can be used in a wide range of applications.

When it comes to the working principle of the FMMT413TA, it follows the same basic principles as other BJTs. The FMMT413TA is a current-controlled element in which electrons from the emitter move through the base region and into the collector. The current through the base is controlled by the application of a voltage to the base-collector junction, which can also be used to control the amount of current flow through the device. The current gain of a BJT is determined by its internal design, as well as the size of the collector region and the amount of doping used in the semiconductor junction.

The FMMT413TA is designed with a low voltage rating of 60V, making it ideal for use in portable electronic devices where battery power is often scarce. This low voltage input also contributes to the device\'s low power dissipation, making it ideal for portable applications where a small power envelope is desired.

Overall, the FMMT413TA is an excellent choice for those looking for a reliable, affordable BJT. It features high current gain, relatively low noise, and fast switching speeds, making it well-suited for a variety of applications. The device is also capable of operating in a wide range of temperatures and offers a low voltage rating, making it ideal for use in portable devices.

The specific data is subject to PDF, and the above content is for reference

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