Allicdata Part #: | FMMT451TR-ND |
Manufacturer Part#: |
FMMT451TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 60V 1A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 1A 150MHz 500mW S... |
DataSheet: | FMMT451TA Datasheet/PDF |
Quantity: | 21000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 15mA, 150mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 150mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | FMMT451 |
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.The FMMT451TA is a surface mount PNP transistors, capable of supporting to 115mW of power with a 5V or less of supply voltage. It is often used for applications such as amplifying, switching, and other signal conditioning tasks. This provides robust and stable operations by its PNP type, as it is well-suited for use in low-power circuits.
It is built using an NPN silicon-based semiconductor, meaning that it has an active area consisting of three different layers. The first layer is the emitter, the second layer is the base, and the third is the collector. These layers form a three-terminal structure in which one terminal is connected to the emitter, the second to the base, and the third to the collector. Together, these three terminals form a PNP transistor.
The working principle of this type of transistor is based on the mobility of the charged carriers in the different layers of the active area. When the base terminal receives an input current, it influences the movement of the electrons due to its material properties and electric field. This produces a change in electric current between the emitter and the collector, and thus in the voltage drop between them. The resulting output current will be equal to the input current multiplied by the ratio between the emitter and the collector junction.
The FMMT451TA is commonly used in power management and signal conditioning circuits, where it can be used to amplify and switch signals with minimal power. It is also a versatile choice for general purpose switching tasks, as it is capable of supporting up to 115mW of power with 5V or less of supply voltage. The transistor also has a low leakage rate, making it a great choice for low-power applications.
The FMMT451TA is a reliable and economical choice for amplifying and switching tasks. Its small surface mount design and low power consumption make it ideal for applications where space and power consumption are of a premium. Its ability to handle up to 115mW of power with 5V or less of supply voltage make it a valuable addition to any circuit.
The specific data is subject to PDF, and the above content is for reference
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