FMMT495TA Allicdata Electronics
Allicdata Part #:

FMMT495TR-ND

Manufacturer Part#:

FMMT495TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 150V 1A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 150V 1A 100MHz 500mW ...
DataSheet: FMMT495TA datasheetFMMT495TA Datasheet/PDF
Quantity: 117000
Stock 117000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 250mA, 10V
Power - Max: 500mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: FMMT495
Description

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The FMMT495TA is a single bipolar transistor (BJT) designed to provide maximum power handling, stability, and efficient operation in a variety of applications. It is a high-power, small-signal transistor in an industry-standard TO-220AB package. The device has an integrated collector-base shunt resistance that helps to improve the overall stability of the device, while still providing efficient signal handling. The device also has a high-frequency power handling capability, which is useful for high-frequency applications.

The FMMT495TA is a NPN transistor built with a small signal transistor for general purpose switching and amplification applications. It can be used as a driver or amplifier for a variety of circuits. It has a collector-base shunt resistance for improved overall stability and efficient signal handling, as well as a high-frequency power handling capability for high-frequency applications. It can also be used for DC-DC step down converters, pulse generators, and oscillators.

In terms of its working principle, the FMMT495TA employs a two-terminal unipolar transistor, which consists of an emitter and the collector. When a voltage is applied to the emitter, a current is induced in the emitter-collector path. The current then induces a voltage at the collector, which is a function of the applied voltage and the size of the collector-emitter gap. Thus, the voltage at the collector is the gain of the transistor, which is the measure of the current gain.

The FMMT495TA can be used in a variety of applications, including low to medium power DC-DC converters, pulse generators, amplifier circuits, inverters, switching circuits, and more. Its high power handling capability coupled with its stability makes it an ideal choice for medium to high power applications. Its high-frequency power handling capability also makes it a great choice for high-frequency applications.

The FMMT495TA is an excellent choice for applications where efficiency and stability are of utmost importance. Its small-signal transistor integrated with the collector-base shunt resistance makes it highly efficient and stable, while its high-frequency power handling capability makes it suitable for use in a variety of applications. These features make the FMMT495TA an excellent choice for high-power, high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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