Allicdata Part #: | FMMT495TCDITR-ND |
Manufacturer Part#: |
FMMT495TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 150V 1A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 150V 1A 100MHz 500mW ... |
DataSheet: | FMMT495TC Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 250mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | FMMT495 |
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The FMMT495TC is a silicon PNP bipolar junction transistor (BJT) used as a switch or an amplifier in various electronic circuits. It is a low-power, low-noise device that operates at voltages of up to 40 volts and can withstand currents of up to 0.5 amps.
The FMMT495TC has a maximum collector to emitter voltage of 40 volts, a DC current gain of 30, a maximum collector current of 0.5 amps, and an on resistance of 0.2 ohms. It also has a high input impedance, low output capacitance, and an operating temperature range of -55°C to +150°C. In addition, it has a package size of 0.75mm × 0.6mm, making it ideal for small and compact devices.
The FMMT495TC is mainly used in switching and amplifier applications. As a switch, the device can be used to control the flow of electricity through a circuit. It is used in applications such as switching devices, motor control circuits, and home appliances. As an amplifier, the device can be used in audio systems, communication systems, and general-purpose amplifiers.
The working principle of the FMMT495TC is based on the transistor action. A BJT consists of three parts: an emitter, a base, and a collector. When a voltage is applied to the base, a current is generated between the emitter and the collector. This current can then be used to control the flow of current in a circuit, or to amplify a signal in a circuit. The main advantage of using a BJT is that it can be used in small and compact designs, because it requires little space.
In summary, the FMMT495TC is a low-power and low-noise silicon PNP bipolar junction transistor (BJT) with a maximum collector to emitter voltage of 40 volts, a DC current gain of 30, a maximum collector current of 0.5 amps and an on resistance of 0.2 ohms. It is mainly used in switching and amplifier applications, and its working principle is based on the transistor action. It is an ideal device for small and compact applications.
The specific data is subject to PDF, and the above content is for reference
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