FQA44N10 Allicdata Electronics
Allicdata Part #:

FQA44N10-ND

Manufacturer Part#:

FQA44N10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 48A TO-3P
More Detail: N-Channel 100V 48A (Tc) 180W (Tc) Through Hole TO-...
DataSheet: FQA44N10 datasheetFQA44N10 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 180W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 39 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQA44N10 is a 45V N-Channel MOSFET (Metal Oxide Semi-Conductors Field Effect Transistor) which is commonly used for high and low side switching, power conversion, and power supplies. It is an ideal choice for applications that require high current switching, such as DC motors, DC-DC converters, power amplifiers, power supplies, and lighting. Furthermore, it offers low resistance, low gate charge and low capacitance.

The FQA44N10 is designed to provide low on-resistance ratings, fast switching and low gate charge. It has a maximum voltage rating of 45V and a maximum continuous drain current rating of 10A. It is also able to withstand high temperatures, up to 175°C, and is rated to operate at frequencies of up to 100MHz.

The FQA44N10 is generally used in automotive, industrial, and consumer applications due to its cost-effective design. It is ideal for circuits that need to switch large amounts of power, such as DC motors, switch mode power supplies, power amplifiers, lighting, and more. Furthermore, it can be used in high-side and low-side switching, automotive and industrial applications, as well as for high-frequency switching.

The working principle of the FQA44N10 is based on the concept of the MOSFET (Metal-Oxide-Semiconductor Field-Effect-Transistor). A MOSFET is made up of four main parts: the source, the drain, the gate, and the substrate. The gate controls the current flow between the source and the drain. When a voltage is applied to the gate, it attracts electrons and sets up an electric field in the channel between the source and drain, allowing current to flow. It is this principle that allows the FQA44N10 to achieve such high switching speeds and low losses.

When the gate voltage of the FQA44N10 is held at its rated voltage, the drain-source channel is closed and no current can flow. When a gate voltage is applied, the drain-source channel opens and current can flow. Typically, the gate voltage must be higher than the source voltage for current to flow, although it is possible for current to flow with both sources at the same voltage. The current flowing through the source and drain is proportional to the gate voltage.

The FQA44N10 offers low on-resistance ratings, low gate charge, and fast switching speeds, making it an ideal choice for a variety of applications. Its 45V rating and 10A drain current rating make it suitable for a wide range of applications, from automotive to industrial. Furthermore, its high temperature rating of up to 175°C makes it suitable for high-temperature applications. Finally, its low capacitance and ability to operate at frequencies up to 100MHz make it ideal for high-frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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