Allicdata Part #: | FQA48N20-ND |
Manufacturer Part#: |
FQA48N20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 48A TO-3P |
More Detail: | N-Channel 200V 48A (Tc) 280W (Tc) Through Hole TO-... |
DataSheet: | FQA48N20 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 280W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQA48N20 is a field-effect transistor (FET) belonging to the larger class of metal-oxide-semiconductor FETs (MOSFETs). This type of transistor is made up of a source and drain, with an insulated gate between them. It is designed to be used for power switching in various applications, such as automotive, consumer electronic products, telecommunications, and other industrial uses. In this article, we will discuss the FQA48N20\'s application fields and working principle.
Application Fields
The FQA48N20 is a versatile device with multiple application fields. Its low on-resistance makes it well-suited for power switching applications. For example, it is capable of switching medium and high-current loads with rapid response times. This makes it useful for applications such as motor controls and industrial lighting. Additionally, the FQA48N20 is suitable for general-purpose switching in automotive and consumer electronics applications.
It can be used to switch power in the form of DC, AC, or PWM signals, depending on the application. It is also able to handle varying voltages and power loads, making it suitable for a wide range of applications. It is also relatively efficient due to its low on-resistance.
Working Principle
The FQA48N20 is a MOSFET-based FET, which works on the principle of capacitance effect. In this type of device, an insulated gate is placed between the source and drain leads. This gate is used to control the flow of electrons through the device. When no voltage is applied to the gate, the FQA48N20 acts as an insulator with a high resistance; no current flows through it. When a voltage is applied to the gate, electrons are attracted to the gate, causing the resistance to drop dramatically. This allows current to flow more freely through the device, allowing it to act as a switch.
In addition to its capacitance-based current-switching action, FQA48N20 also has built-in protection mechanisms. It has a built-in reverse-blocking feature, which prevents current from flowing in the wrong direction. Additionally, it has a current limit feature, which limits the amount of current allowed to pass through the device. This helps to ensure the device is used within its safe operating parameters.
Conclusion
The FQA48N20 is an advanced MOSFET-based device well-suited for a variety of applications. Its low on-resistance, fast response times, and built-in protection mechanisms make it a useful component for a wide range of applications. Its versatile design allows it to handle varying power loads and voltages, making it a go-to choice for engineers needing a reliable power switch.
The specific data is subject to PDF, and the above content is for reference
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