| Allicdata Part #: | FQA46N15_F109-ND |
| Manufacturer Part#: |
FQA46N15_F109 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 150V 50A TO-3P |
| More Detail: | N-Channel 150V 50A (Tc) 250W (Tc) Through Hole TO-... |
| DataSheet: |  FQA46N15_F109 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | QFET® |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 150V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 42 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Vgs (Max): | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3250pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 250W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-3PN |
| Package / Case: | TO-3P-3, SC-65-3 |
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The FQA46N15_F109 is a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) designed for use in power circuits. It is a type of single field-effect transistor with a high switching speed and high gains, which enable it to be used in high-frequency applications. This device also exhibits desirable characteristics such as low power consumption and low input capacitance.
The FQA46N15_F109 is a N-channel MOSFET that is capable of carrying up to 46 amperes of continuous drain current. It is also capable of providing a maximum drain-source voltage of 15V. The device can work efficiently in a range of temperatures from -55°C to 175°C, making it suitable for a wide range of applications.
The FQA46N15_F109 is typically used in power management, motor control, and high-speed switching applications. It can also be utilized in charging circuits, switching converters, and isolated power supplies. The device is typically used in combination with other semiconductor circuits to create complex systems.
The working principle of the FQA46N15_F109 is the same as that of other MOSFETs. When a voltage is applied to the gate terminal, it causes the electric field in the depletion region to expand, which in turn enables electrons from the conduction channel to enter the gate region. This causes the resistance between drain and source terminals to be reduced, thereby allowing current to flow between them. The device is typically used in the form of analog switches, in which the voltage applied to the gate terminal is used to switch the device on or off.
The FQA46N15_F109 is a powerful and efficient MOSFET for use in a range of power applications. It operates at high speeds with low power consumption and has a low input capacitance. The device is also capable of withstanding extreme temperatures, making it suitable for operation in a wide range of environments. This makes the FQA46N15_F109 an excellent choice for those looking for a reliable, high-performance MOSFET.
The specific data is subject to PDF, and the above content is for reference
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